EEWORLDEEWORLDEEWORLD

Part Number

Search

MB8S

Description
0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size190KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric Compare View All

MB8S Online Shopping

Suppliers Part Number Price MOQ In stock  
MB8S - - View Buy Now

MB8S Overview

0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

MB8S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage800 V
Maximum average input current0.5000 A
Processing package descriptionPlastic, MBS-1, 4 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current35 A
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIERS
MB1S - MB10S
MB-S
Surface Mount Package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ºC Ambient temperature unless specified otherwise. Single phase, half wave, 60Hz
resistive or inductive load. For capacitive load, derate current by 20%
DESCRIPTION
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
o
T
a
=40 C
Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on
rated load
Maximum Forward Voltage at I
F
=0.4A
Maximum DC Reverse Current T
a
=25 C
at Rated DC Blocking Voltage T
a
=125
o
C
Typical Junction Capacitance
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
o
SYMBOL MB1S MB2S MB4S MB6S MB8S MB10S
V
RRM
100
200
400 600
800
1000
V
RMS
V
DC
*I
(AV)
70
100
140
200
280
400
420
600
0.8
560
800
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
**C
J
R
th (j-a)
T
j
T
stg
30
1.1
5.0
500
15
75
- 55 to +150
- 55 to +150
A
V
µA
µA
pF
ºC/W
ºC
ºC
*Mounted on P.C. board
**Measured at 1MHz and applied reverse voltage of 4.0 V
MB1S_10SRev060106E
Continental Device India Limited
Data Sheet
Page 1 of 3

MB8S Related Products

MB8S MB1S MB10S MB2S MB4S
Description 0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
state DISCONTINUED ACTIVE ACTIVE ACTIVE TRANSFERRED
Diode type bridge rectifier diode BRIDGE RECTIFIER DIODE bridge rectifier diode BRIDGE RECTIFIER DIODE bridge rectifier diode

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1479  2795  1787  1743  2092  30  57  36  43  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号