CBCX69TR datasheet, PDF - EEWORLD Datasheet

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CBCX69TR: DescriptionPower Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size66KB，2 Pages; ManufacturerCentral Semiconductor

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CBCX69TR Overview

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

CBCX69TR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	85
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	65 MHz
VCEsat-Max	0.5 V

CBCX69TR Preview

CBCX68 NPN

CBCX69 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

SMALL SIGNAL TRANSISTORS

Central

DESCRIPTION:

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CBCX68,

CBCX69 types are complementary silicon

transistor manufactured by epitaxial planar

process, epoxy molded in a surface mount

package, designed for applications requiring high

current capability.

MARKING CODE: FULL PART NUMBER

SOT-89 CASE

MAXIMUM RATINGS

(TA=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current-Peak

Base Current

Base Current Peak

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Temperature

SYMBOL

VCES

VCEO

VEBO

ICM

IBM

TJ,Tstg

5.0

1.0

2.0

100

200

1.2

-65 to +150

104

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

VCB=25V

VCB=25V, TA=150°C

VEB=5.0V

IC=10µA

IC=10mA

IE=1.0µA

IC=1.0A, IB=100mA

VCE=10V,IC=5.0mA

VCE=1.0V, IC=1.0A

VCE=10V,IC=500mA

VCE=1.0,IC=500mA

VCE=1.0V, IC=1.0A

VCE=5.0V,IC=10mA, f=20MHz

5.0

TYP

MAX

100

UNITS

µA

0.5

0.6

1.0

375

MHz

R7 (20-May 2004)

Central

Semiconductor Corp.

CBCX68 NPN

CBCX69 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

SMALL SIGNAL TRANSISTORS

SOT-89 CASE - MECHANICAL OUTLINE

BOTTOM VIEW

LEAD CODE:

1) EMITTER

2) COLLECTOR

3) BASE

MARKING CODE:

FULL PART NUMBER

DIMENSIONS

INCHES

MILLIMETERS

MAX MIN

MAX

SYMBOL MIN

0.055 0.067 1.40

1.70

4°

0.014 0.018 0.35

0.46

0.173 0.185 4.40

4.70

0.064 0.074 1.62

1.87

0.146 0.177 3.70

4.50

0.090 0.106 2.29

2.70

0.028 0.051 0.70

1.30

0.014 0.019 0.36

0.48

0.017 0.023 0.44

0.58

0.059

1.50

0.118

3.00

SOT-89 (REV: R4)

R7 (20-May 2004)

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