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5962-01-446-7761

Description
EEPROM, 64KX8, 120ns, Parallel, CMOS, CQCC32,
Categorystorage    storage   
File Size246KB,45 Pages
ManufacturerXicor Inc.
Download Datasheet Parametric Compare View All

5962-01-446-7761 Overview

EEPROM, 64KX8, 120ns, Parallel, CMOS, CQCC32,

5962-01-446-7761 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerXicor Inc.
Reach Compliance Codeunknown
Maximum access time120 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-XQCC-N32
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Number of terminals32
word count65536 words
character code64000
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize64KX8
Package body materialCERAMIC
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size128 words
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0005 A
Maximum slew rate0.05 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
switch bitYES
Maximum write cycle time (tWC)5 ms
NOTICE OF REVISION (NOR)
THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.
1. DATE
(YYMMDD)
98-08-06
Form Approved
OMB No. 0704-0188
2. PROCURING
ACTIVITY NO.
3. DODAAC
6. NOR NO.
5962-R160-98
8. DOCUMENT NO.
Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data
sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate
or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washingtion Headquarters
Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of
Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.
PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETED FORM TO THE GOVERNMENT
ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS FORM.
4. ORIGINATOR
a. TYPED NAME
(First, Middle Initial,
Last)
b. ADDRESS
(Street, City, State, Zip Code)
Defense Supply Center Columbus
3990 East Broad Street
Columbus, OH 43216-5000
5. CAGE CODE
67268
7. CAGE CODE
67268
5962-90869
11. ECP NO.
9. TITLE OF DOCUMENT
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K x 8
ELECTRICALLY ERASABLE PROGRAMMABLE READ
ONLY MEMORY (EEPROM) , MONOLITHIC SILICON
12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES
All
10. REVISION LETTER
a. CURRENT
A
b. NEW
B
Verbal coordination
record on file.
13. DESCRIPTION OF REVISION
Sheet 1:
Revisions ltr column; add "B".
Revisions description column; add "Changes in accordance with NOR 5962-R160-98".
Revisions date column; add "98-08-06".
Revision level block; add "B".
Rev status of sheets; for sheets 12 and 33, add "B".
Sheet 12: Footnote 5/, under "Timing measurement reference levels:", for Inputs delete 1 V and 2 V and replace with 1.5 V;
for Outputs delete 0.8 V and 2.0 V and replace with 1.5 V.
Revision level block; add "B".
Sheet 33: Add note beneath Table III to read: "For VOH and VOL, the logic output compare levels shall be 1.5 V for subgroups 9,
10, and 11 only."
Revision level block; add "B".
14. THIS SECTION FOR GOVERNMENT USE ONLY
a.
(X one)
X
(1) Existing document supplemented by the NOR may be used in manufacture.
(2) Revised document must be received before manufacturer may incorporate this change.
(3) Custodian of master document shall make above revision and furnish revised document.
b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT
DSCC-VAS
d. TITLE
Chief, Microelectronics Team
15a. ACTIVITY ACCOMPLISHING REVISION
DSCC-VAS
DD Form 1695, APR 92
e. SIGNATURE
Raymond Monnin
b. REVISION COMPLETED
(Signature)
Gary L. Gross
f. DATE SIGNED
(YYMMDD)
98-08-06
c. DATE SIGNED
(YYMMDD)
98-08-06
c. TYPED NAME
(First, Middle Initial, Last)
Previous editions are obsolete.

5962-01-446-7761 Related Products

5962-01-446-7761 MUR7010 5962-01-357-5429
Description EEPROM, 64KX8, 120ns, Parallel, CMOS, CQCC32, 70A ULTRA FAST RECOVERY RECTIFIER EEPROM, 64KX8, 250ns, Parallel, CMOS, CQCC32,
Is it Rohs certified? incompatible - incompatible
Maker Xicor Inc. - Xicor Inc.
Reach Compliance Code unknown - unknow
Maximum access time 120 ns - 250 ns
command user interface NO - NO
Data polling YES - YES
Durability 10000 Write/Erase Cycles - 10000 Write/Erase Cycles
JESD-30 code R-XQCC-N32 - R-XQCC-N32
memory density 524288 bit - 524288 bi
Memory IC Type EEPROM - EEPROM
memory width 8 - 8
Number of terminals 32 - 32
word count 65536 words - 65536 words
character code 64000 - 64000
Maximum operating temperature 125 °C - 125 °C
Minimum operating temperature -55 °C - -55 °C
organize 64KX8 - 64KX8
Package body material CERAMIC - CERAMIC
encapsulated code QCCN - QCCN
Encapsulate equivalent code LCC32,.45X.55 - LCC32,.45X.55
Package shape RECTANGULAR - RECTANGULAR
Package form CHIP CARRIER - CHIP CARRIER
page size 128 words - 128 words
Parallel/Serial PARALLEL - PARALLEL
power supply 5 V - 5 V
Certification status Not Qualified - Not Qualified
Filter level 38535Q/M;38534H;883B - 38535Q/M;38534H;883B
Maximum standby current 0.0005 A - 0.0005 A
Maximum slew rate 0.05 mA - 0.05 mA
Nominal supply voltage (Vsup) 5 V - 5 V
surface mount YES - YES
technology CMOS - CMOS
Temperature level MILITARY - MILITARY
Terminal form NO LEAD - NO LEAD
Terminal pitch 1.27 mm - 1.27 mm
Terminal location QUAD - QUAD
switch bit YES - YES
Maximum write cycle time (tWC) 5 ms - 5 ms
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