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BC847BS-7

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size60KB,3 Pages
ManufacturerDiodes Incorporated
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BC847BS-7 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

BC847BS-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

BC847BS-7 Preview

BC847BS
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
SPICE MODEL: BC847BS
Features
·
·
·
·
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Also Available in Lead Free/RoHS Compliant Version
(Note 2)
C
2
SOT-363
A
B
1
E
1
Dim
A
B
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking: K1F (See Page 2)
Weight: 0.006 grams
Ordering & Date Code Information: See Page 2
K
C
D
F
H
J
M
E
2
B
2
C
1
0.65 Nominal
G
H
K
L
M
a
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
d
R
qJA
T
j
, T
STG
Value
50
45
5.0
100
200
200
200
500
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
DS30222 Rev. 6 - 2
1 of 3
www.diodes.com
BC847BS
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
DC Current Gain (Note 3)
@ T
A
= 25°C unless otherwise specified
Symbol
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE
I
CBO
I
CBO
I
EBO
f
T
C
CBO
C
EBO
Min
200
580
100
Typ
755
665
11
Max
450
100
400
700
15
5.0
100
1.5
Unit
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CB
= 30V, I
E
= 0
V
CB
= 30V, T
j
= 125°C
V
EB
= 5.0V, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
EB
= 0.5V, f = 1.0MHz
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector Cutoff Current (Note 3)
Emitter Cutoff Current (Note 3)
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Ordering Information
(Note 4)
Device
BC847BS-7
Packaging
SOT-363
Shipping
3000/Tape & Reel
Notes: 3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC847BS-7-F.
Marking Information
K1F
YM
K1F = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
Feb
2
1999
K
March
3
2000
L
Apr
4
May
5
2001
M
Jun
6
Jul
7
2002
N
Aug
8
Sep
9
2003
P
Oct
O
2004
R
Nov
N
Dec
D
DS30222 Rev. 6 - 2
2 of 3
www.diodes.com
K1F
YM
BC847BS
250
(see Note 1)
1000
V
CE
= 5V
100°C
P
d
, POWER DISSIPATION (mW)
200
h
FE,
DC CURRENT GAIN
T
A
= 25°C
100
-50°C
150
100
10
50
0
0
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
V
CE
, COLLECTOR SATURATION VOLTAGE (V)
I
C
/ I
B
= 20
1
200
0.01
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
1000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
T
A
= 25°C
0.4
V
CE
= 10V
5V
2V
0.3
100
0.2
T
A
= 100°C
0.1
25°C
-50°C
0
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
10
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
Notes:
1. Device mounted on FR4 printed circuit board
.
DS30222 Rev. 6 - 2
3 of 3
www.diodes.com
BC847BS

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