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SMBD6050

Description
Rectifier Diode, 1 Element, 0.25A, 70V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size99KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SMBD6050 Overview

Rectifier Diode, 1 Element, 0.25A, 70V V(RRM),

SMBD6050 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Number of components1
Maximum output current0.25 A
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.01 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

SMBD6050 Preview

Silicon Switching Diode
q
For high-speed switching applications
SMBD 6050
Type
SMBD 6050
Marking
s5A
Ordering Code
(tape and reel)
Q68000-A8439
Pin Configuration
Package
1)
SOT-23
Maximum Ratings
Parameter
Reverse voltage
Peak reverse voltage
Forward current
Surge forward current,
t
= 1
µ
s
Total power dissipation,
T
S
= 54 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
330
260
Symbol
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
Values
70
70
250
4.5
370
150
– 65 … + 150
Unit
V
mA
A
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBD 6050
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Breakdown voltage
I
(BR)
= 100
µ
A
Forward voltage
I
F
= 1 mA
I
F
= 100 mA
Reverse current
V
R
= 50 V
AC characteristics
Diode capacitance
V
R
= 0,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
Test circuit for reverse recovery time
C
D
t
rr
2.5
10
pF
ns
V
(BR)
V
F
550
850
I
R
700
1100
100
nA
70
V
mV
Values
typ.
max.
Unit
Pulse generator:
t
p
= 100 ns,
D
= 0.05
t
r
= 0.6 ns,
R
j
= 50
Oscillograph:
R
= 50
t
r
= 0.35 ns
C
1 pF
Semiconductor Group
2
SMBD 6050
Forward current
I
F
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Reverse current
I
R
=
f
(T
A
)
Forward current
I
F
=
f
(V
F
)
T
A
= 25 ˚C
Peak forward current
I
FM
=
f
(t)
T
A
= 25 ˚C
Semiconductor Group
3
SMBD 6050
Forward voltage
V
F
=
f
(T
A
)
Semiconductor Group
4
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