BAT754L
22 November 2012
Schottky barrier triple diode
Product data sheet
1. Product profile
1.1 General description
Three internal isolated planar Schottky barrier diodes with an integrated guard ring for
stress protection,encapsulated in very small SOT363 Surface-Mounted Device (SMD)
plastic package.
1.2 Features and benefits
•
Low forward voltage
•
Low capacitance
•
AEC-Q101 qualified
1.3 Applications
•
Ultra high-speed switching
•
Line termination
•
Voltage clamping
•
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
R
Per diode
V
F
I
R
forward voltage
reverse current
I
F
= 100 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
V
R
= 25 V; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
-
-
2
µA
-
-
750
mV
reverse voltage
-
-
30
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
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NXP Semiconductors
BAT754L
Schottky barrier triple diode
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
A1
A2
A3
K3
K2
K1
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
2
3
Simplified outline
6
5
4
Graphic symbol
K1
K2
K3
A1
A2
A3
TSSOP6 (SOT363)
aaa-005704
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT754L
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
BAT754L
[1]
L1%
% = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
T
j
T
amb
BAT754L
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
Conditions
Min
-
-
Max
30
200
300
600
125
125
Unit
V
mA
mA
mA
°C
°C
t
p
< 1 s; δ < 0.5
t
p
< 10 ms; T
j(init)
= 25 °C
-
-
-
-55
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
2/9
NXP Semiconductors
BAT754L
Schottky barrier triple diode
Symbol
T
stg
Parameter
storage temperature
Conditions
Min
-65
Max
150
Unit
°C
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
[1]
Conditions
in free air
[1]
Min
-
Typ
-
Max
416
Unit
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 7.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
I
F
= 1 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
I
F
= 10 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
I
F
= 30 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
I
F
= 100 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
I
R
C
d
reverse current
diode capacitance
V
R
= 25 V; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C
-
-
10
pF
-
-
2
µA
-
-
750
mV
-
-
420
mV
-
-
340
mV
-
-
260
mV
-
-
200
mV
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BAT754L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
3/9
NXP Semiconductors
BAT754L
Schottky barrier triple diode
10
3
I
F
(mA)
10
2
(1)
006aac830
(2)
10
3
I
R
(µA)
10
2
(1)
aaa-004516
(3)
(2)
10
(1)
(2)
(3)
10
1
1
(3)
10
-1
0.0
0.4
0.8
V
F
(V)
1.2
10
-1
0
10
20
V
R
(V)
30
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
15
C
d
(pF)
10
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
msa891
5
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT754L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
4/9
NXP Semiconductors
BAT754L
Schottky barrier triple diode
9. Package outline
2.2
1.8
6
5
4
0.45
0.15
1.1
0.8
2.2 1.35
2.0 1.15
pin 1
index
1
0.65
1.3
Dimensions in mm
2
3
0.3
0.2
0.25
0.10
06-03-16
Fig. 4.
Package outline TSSOP6 (SOT363)
10. Soldering
2.65
solder lands
2.35 1.5
0.6 0.5
(4×) (4×)
0.4 (2×)
solder resist
solder paste
0.5
(4×)
0.6
(4×)
1.8
0.6
(2×)
occupied area
Dimensions in mm
sot363_fr
Fig. 5.
Reflow soldering footprint for TSSOP6 (SOT363)
BAT754L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
5/9
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