DPSD128MX8XKY5-DP-XX55 datasheet, PDF

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DPSD128MX8XKY5-DP-XX55: DescriptionSynchronous DRAM, 128MX8, CMOS, PDSO54, STACKED, TSOP2-54; Categorystorage storage; File Size142KB，2 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPSD128MX8XKY5-DP-XX55 Overview

Synchronous DRAM, 128MX8, CMOS, PDSO54, STACKED, TSOP2-54

DPSD128MX8XKY5-DP-XX55 Parametric

Parameter Name	Attribute value
Maker	B&B Electronics Manufacturing Company
Parts packaging code	TSOP2
package instruction	ATSOP,
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G54
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	54
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	ATSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, PIGGYBACK, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	2.59 mm
self refresh	YES
surface mount	YES
technology	CMOS
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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ADVANCE D COM P ON E NTS PACKAG I NG

1 Gigabit Synchronous DRAM

DPSD128MX8XKY5

DESCRIPTION:

The Memory Stack™ series is a family of interchangeable memory devices. The 1 Gigabit Synchronous DRAM assembly

utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb

(64M x 8) SDRAMs.

This 1Gb LP-Stack™ has been designed to fit in the same

footprint as the 512Mb (64M x 8) SDRAM TSOPII

monolithic. This stack allows for system upgrade while

providing an alternative low cost memory solution.

FEATURES:

•

Electrical characteristics meet semiconductor

manufacturers’ datasheets

Memory organization:

(2) 512Mb memory devices. Each device arranged

as 64M x 8 bits (16M x 8 bits x 4 banks)

Memory stack organization:

128M x 8 bits (32M x 8 bits x 4 banks)

•

JEDEC approved, 2 Rank stack pinout and

footprint (with 2 CSs)

Optimized for RDIMMs

IPC-A-610, class 2, manufacturing standards

Lead free manufacturing process

Package: 54-Pin TSOPII stack

PINOUT DIAGRAM

VCC

DQ0

VCCQ

DQ1

VSSQ

DQ2

VCCQ

DQ3

VSSQ

VCC

CS1

CAS

RAS

CS0

BA0

BA1

A10

VCC

•

(TOP VIEW)

VSS

DQ7

VSSQ

DQ6

VCCQ

DQ5

VSSQ

DQ4

VCCQ

VSS

DQM

CLK

CKE

A12

A11

VSS

A0-A12

BA0, BA1

DQ0-DQ7

CAS

RAS

DQM

CKE

CLK

CS0, CS1

DD/

DDQ/

SSQ

30A248-00

REV. C 6/03

PIN NAMES

Row Address:

Column Address:

A0-A12

A0-A9, A11

FUNCTIONAL BLOCK DIAGRAM

(16M x 8 bit x 4 bank)

Bank Select Address

Data In/Data Out

Column Address Strobe

Row Address Strobe

Data Write Enable

Data Input/Output Mask

Clock Enable

System Clock

Chip Selects

Power Supply/Ground

Data Output Power/Ground

No Connect

This document contains information on a product that is currently released to production at DPAC Technologies.

DPAC reserves the right to change products or specifications herein without prior notice.

CS1

CS0

RAS

CAS

CLK

DQM

CKE

A0-A12

BA0,BA1

(16M x 8bit x 4 bank)

512 Mb SDRAM

DQ0-DQ7

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