BDS16.MOD datasheet, PDF - EEWORLD Datasheet

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BDS16.MOD: Description8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size198KB，3 Pages; ManufacturerSEMELAB

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BDS16.MOD Overview

8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS16.MOD Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SEMELAB
Parts packaging code	TO-220M
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

BDS16.MOD Preview

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BDS16 / BDS17

•

High Voltage

Hermetic TO220M (T0-257AB) Isolated Metal Package

Ideally suited for Power Linear, Switching

and general Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

BDS16

VCBO

VCEO

VEBO

IE, IC

T stg

Collector – Base Voltage (IE = 0)

Collector – Emitter Voltage (IB = 0)

Emitter – Base Voltage (IC = 0)

Emitter, Collector Current

Base Current

Total Power Dissipation at

Junction Temperature Range

Storage Temperature Range

120V

BDS17

150V

25°C

43.75W

+200°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

4.0

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab Limited

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 3347

Issue 3

Page 1 of 1

Website:

http://www.semelab-tt.com

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BDS16 / BDS17

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise stated)

Symbols

ICBO

ICEO

IEBO

VCEO(sus)

VCE(sat)

VBE(on)

hFE

(1)

Parameters

Collector Cut-Off Current

(IE = 0)

Collector Cut-Off Current

(IB = 0)

Emitter Cut-Off Current

(IC = 0)

Collector – Emitter

Sustaining Voltage (IB = 0)

Collector – Emitter

Saturation Voltage

Base-Emitter Voltage

DC Current Gain

Test Conditions

BDS16

BDS17

BDS16

BDS17

VCB = 120V

VCB = 150V

VCE = 60V

VCE = 75V

VEB = 5V

BDS16

BDS17

IC = 4.0A

IC = 0.5A

IC = 1.0A

IC = 0.5A

IC = 4A

IC = 100mA

IB = 0.4A

IB = 0.05A

VCE = 2.0V

Min.

Typ

Max.

0.1

Units

µA

120

150

1.5

0.4

1.0

250

150

(1)

DYNAMIC CHARACTERISTICS

ton

Transition Frequency

IC = 0.5A

F = 20MHz

IC = 2A

IB1 = 0.2A

IC = 2A

IB1 = - IB2 = 0.2A

VCC = 80V

VCE = 10V

MHz

Turn-On Time

Storage Time

Fall Time

0.5

2.0

0.3

µs

Notes

(1) Pulse Width

≤

300us,

δ ≤

1.5%

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab Limited

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Website:

http://www.semelab-tt.com

Document Number 3347

Issue 3

Page 2 of 2

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BDS16 / BDS17

MECHANICAL DATA

Dimensions in mm (inches)

4.83 (0.190)

5.33 (0.210)

0.64 (0.025)

0.89 (0.035)

10.92 (0.430)

10.41 (0.410)

13.21 (0.52)

13.72 (0.54)

13.21 (0.52)

13.72 (0.54)

3.56 (0.140)

Dia

3.81 (0.150)

10.41 (0.410)

10.92 (0.430)

12.70 (0.500)

14.73 (0.750)

0.89 (0.035)

Dia.

1.27 (0.050)

2.54 (0.100)

BSC

3.05 (0.120)

BSC

TO220M (TO-257AB)

Pin 1 - Base

Pin 2 - Collector

Pin 3 - Emitter

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab Limited

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Website:

http://www.semelab-tt.com

Document Number 3347

Issue 3

Page 3 of 3

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BDS16.MOD Related Products

	BDS16.MOD	BDS17R1	BDS17.MOD	BDS17-QR-B	BDS16R1
Description	8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free?	Contains lead	Lead free	Contains lead	Contains lead	Lead free
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	conform to
Maker	SEMELAB	SEMELAB	SEMELAB	SEMELAB	SEMELAB
Parts packaging code	TO-220M	TO-220M	TO-220M	TO-220M	TO-220M
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	120 V	150 V	150 V	150 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15	15
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz

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