DMG3420U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(ON)
max
21mΩ @ V
GS
= 10V
25mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
6.5A
5.2A
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
Applications
•
•
General Purpose Interfacing Switch
Power Management Functions
SOT23
D
Gate
G
TOP VIEW
TOP VIEW
S
Source
Equivalent Circuit
Ordering Information
Part Number
DMG3420U-7
DMG3420UQ-7
Notes:
(Note 4)
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4.
For packaging details, go to our website at http://www.diodes.com.
Marking Information
G31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
G31
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
YM
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMG3420U
Document number: DS31867 Rev. 3 - 2
1 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMG3420U
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 85°C
I
D
I
DM
Value
20
±12
5.47
3.43
20
Units
V
V
A
A
NEW PRODUCT
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
0.74
167
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.95
21
25
34
65
9
0.75
434.7
69.1
61.2
1.53
5.4
0.9
1.5
6.5
8.3
21.6
5.3
Max
—
1.0
±100
1.2
29
35
48
91
—
1.0
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4A
V
GS
= 1.8V, I
D
= 2A
V
DS
= 5V, I
D
= 3.8A
V
GS
= 0V, I
S
= 1A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7Ω, R
G
= 6Ω
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG3420U
Document number: DS31867 Rev. 3 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMG3420U
20
V
GS
= 10V
20
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 2.5V
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
15
V
GS
= 4.5V
15
10
V
GS
= 2.0V
10
5
V
GS
= 1.8V
5
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
GS
= 1.5V
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
5
0
0
1
2
3
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.08
0.08
V
GS
= 4.5V
0.06
0.06
0.04
V
GS
= 2.5V
0.04
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.02
V
GS
= 4.5V
0.02
T
A
= 25°C
T
A
= -55°C
0
0
5
10
15
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
0
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
1.5
1.3
0.06
0.05
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.04
0.03
V
GS
= 2.5V
I
D
= 5A
1.1
V
GS
= 4.5V
I
D
= 10A
0.9
V
GS
= 2.5V
I
D
= 5A
0.02
V
GS
= 4.5V
I
D
= 10A
0.7
0.5
-50
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG3420U
Document number: DS31867 Rev. 3 - 2
3 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMG3420U
1.6
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.4
16
I
S
, SOURCE CURRENT (A)
20
1.2
I
D
= 1mA
T
A
= 25°C
1.0
0.8
0.6
0.4
0.2
0
-50
I
D
= 250µA
12
NEW PRODUCT
8
4
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1,000
f = 1MHz
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
10,000
C
iss
C, CAPACITANCE (pF)
1,000
T
A
= 150°C
T
A
= 125°C
100
C
oss
C
rss
100
10
T
A
= 85°C
T
A
= 25°C
10
1
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 162°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMG3420U
Document number: DS31867 Rev. 3 - 2
4 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMG3420U
Package Outline Dimensions
A
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
NEW PRODUCT
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMG3420U
Document number: DS31867 Rev. 3 - 2
5 of 6
www.diodes.com
January 2013
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
