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CSB621

Description
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
File Size96KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CSB621 Overview

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CSB621, CSB621A
TO-92
Plastic Package
E
CB
AF Output Amplifier
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Peak
Collector Current
Power Dissipation @ T
a
=25ºC
Junction Temperature
Storage Temperature Range
*P
C
=600mW/Potting type: P
C
=600mW
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
Collector Base Voltage
SYMBOL
I
CBO
V
CBO
TEST CONDITION
V
CB
=20V, I
E
= 0
I
C
=10µA, I
E
=0
CSB621
CSB621A
I
C
=2mA, I
B
=0
CSB621
CSB621A
I
E
=10µA, I
C
=0
V
CE
=10V, I
C
=500mA
V
CE
=5V, I
C
=1A
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=50mA, V
CE
=10V
I
E
=0, V
CB
=10V,f=1MHz
R : 120 - 240
200
30
S : 170 - 340
MIN
TYP
MAX
0.1
UNITS
µA
V
V
V
V
V
340
0.4
1.2
V
V
MHz
pF
SYMBOL
V
CEO
V
CBO
V
EBO
I
CP
I
C
*P
C
T
j
T
stg
CSB621
25
30
5.0
1.5
1.0
750
150
- 55 to +150
CSB621A
50
60
UNITS
V
V
V
A
A
mW
ºC
ºC
30
60
25
50
5
85
50
Collector Emitter Voltage
V
CEO
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Output Capacitance
*h
FE
Classifications
V
EBO
*h
FE
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Q : 85 - 170
Continental Device India Limited
Data Sheet
Page 1 of 3

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