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K1V(A)11

Description
SIDAC, 118V V(BO) Max, AX06, 2 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size324KB,10 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Environmental Compliance
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K1V(A)11 Overview

SIDAC, 118V V(BO) Max, AX06, 2 PIN

K1V(A)11 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSHINDENGEN
Parts packaging codeAXIAL RECTIFIER
package instructionLONG FORM, O-XALF-W2
Contacts2
Manufacturer packaging codeAX06
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakover voltage118 V
Minimum breakover voltage104 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum holding current50 mA
Nominal holding current50 mA
JESD-30 codeO-XALF-W2
Humidity sensitivity level2
On-state non-repetitive peak current16 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Repeated peak reverse voltage90 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Trigger device typeSIDAC

K1V(A)11 Preview

SHINDENGEN
Sidac
K1V(A)11
OUTLINE DIMENSIONS
Case : AX06
(Unit : mm)
RATINGS
œAbsolute
Maximum Ratings
Item
Storage Temperature
Operating Junction Temperature
Maximum Off-state Voltage
RMS On-state Current
Surge On-state Current
Symbol
Tstg
Tj
V
DRM
I
TSM
I
TRM
I
T
Conditions
Tl = 98Ž, 50Hz sine wave (Æ = 180‹j
Tj = 25Ž, 50Hz sine wave (Æ = 180‹j,
non-repetitive 1-cycle peak value
Ta =25
Ž,
pulse width t
o
= 10
Ês,
sine wave,
repetitive peak value
f = 1 kHz
Ta =25
Ž,
pulse width t
o
= 10
Ês,
sine wave,
repetitive peak value
f = 60 Hz
Ratings
-40`125
125
90
1
16
15
Unit
Ž
Ž
V
A
A
A
Pulse On-state Current
60
50
Ratings
104`118
Max 10
Max 0.5
TYP 50
Max 1.6
Min 0.1
Max 20
Standard
0.6
A/Ês
Unit
V
ÊA
mA
mA
V
Ž/W
Unit
A
Critical Rate of Rise of On-state Current
di
T
/dt
œElectrical
Characteristics (Tl=25Ž)
Item
Symbol
Breakover Voltage
V
BO
Off-state Current
I
DRM
Breakover Current
I
BO
Holding Current
I
H
On-state Voltage
V
T
Switching Resistance
R
S
Thermal Resistance
Æjl
œStandard
Design with P.C.B.
Item
RMS On-state Current
Conditions
I
B
= 0, 50Hz sine wave
V
D
= V
DRM
I
T
= 1A
Junction to lead
Conditions
Symbol
I
T
Assembled in P.C.B., Ta = 25Ž,
soldering land 3mmÓ
K1V(A)10
K1V(A)11
K1V(A)12
Typical On-State Voltage
3
Instantaneous On-State Current I
T
[A]
Tl=125°C [TYP]
1
0.8
Tl=25°C [TYP]
0.6
0.4
Pulse measurement
0.2
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Instantaneous On-State Voltage V
T
[V]
K1V(A)10
K1V(A)11
K1V(A)12
1.6
Tj=125°C
Sine Wave
Conduction Angle 180°
1.4
Power Dissipation
1.2
Power Dissipation P [W]
1
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
On-State Current I
T
(rms) [A]
K1V(A)10
K1V(A)11
K1V(A)12
1.4
Tj=125°C
Sine Wave
Conduction Angle 180°
1.2
Maximum Lead Temperature
1
On-State Current I
T
(rms) [A]
0.8
0.6
0.4
0.2
0
40
60
80
100
120
140
Allowable Lead Temperature Tl [°C]
K1V(A)10
K1V(A)11
K1V(A)12
1.2
Tj=125°C
Sine Wave
Conduction Angle 180°
Maximum Ambient Temperature
Mounted on PCB
20mm
l
1
Soldering land 3mmφ
l = 2~15mm
On-State Current I
T
(rms) [A]
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
Allowable Ambient Temperature Ta [°C]

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