2SA18153 datasheet, PDF - EEWORLD Datasheet

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2SA18153: DescriptionVHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size31KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA18153 Overview

VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR

2SA18153 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1.6 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	750 MHz
Base Number Matches	1

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Ordering number:ENN4625

PNP Epitaxial Planar Silicon Transistors

2SA1815

FM, RF, MIX, IF Amplifier, High-Frequency

General-Purose Amplifier Applications

Features

· High power gain : PG=25dB (f=100MHz).

· High cutoff frequency ; f

=750MHz typ.

· Low collector-to-emitter saturation voltage.

· Complementary pair with the 2SC4432.

Package Dimensions

unit:mm

2018B

[2SA1815]

0.5

0.4

0.16

0 to 0.1

0.95 0.95

1.9

2.9

0.8

1.1

0.5

1.5

2.5

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

Tstg

Conditions

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

Ratings

–15

–12

–3

–50

250

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Reverse Transfer Capacitance

Collector-to-Emitter Saturation Voltage

Power Gain

Symbol

ICBO

IEBO

hFE

Cob

Cre

VCE(sat)

VCB=–12V, IE=0

VEB=–2V, IC=0

VCE=–10V, IC=–5mA

VCB=–10V, f=1MHz

IC=–10mA, IB=–1mA

VCE=–10V, IC=–10mA, f=100MHz

60*

750

1.2

0.9

–0.1

–0.3

1.6

Conditions

Ratings

min

typ

max

–0.1

270*

MHz

Unit

µA

* : The 2SA1815 is calssified by 5mA h

as follows :

Rank

hFE

60 to 120

90 to 180

135 to 270

Marking : JS

rank : 3, 4, 5

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80103TN (KT)/91098HA (KT)/12894HO (KOTO) AX-8848 No.4625–1/3

2SA1815

PG -- IC

VCE=10V

f=100MHz

--1000

VCE(sat) -- IC

IC / IB=10

Collector-to-Emitter

Saturation Voltage, VCE (sat) – mV

--100

5 7 --0.1

5 7 --1.0

5 7 --10

5 7

Power Gain, PG –dB

7 --1.0

7 --10

Collector Current, IC – mA

280

250

240

ITR04751

PC -- Ta

Collector Current, IC – mA

5 7 --100

ITR04752

Collector Dissipation, P

– mW

200

160

120

100

120

140

160

Ambient Temperature, Ta – ˚C

ITR04753

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2003. Specifications and information herein are subject to

change without notice.

PS No.4625–3/3

2SA18153 Related Products

	2SA18153	2SA1815-3	2SA1815-4	2SA18154	RN12C1270CT1-25	RN12C1270CT5-25
Description	VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236, CP, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236, CP, 3 PIN	VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR	Fixed Resistor, Thin Film, 0.125W, 127ohm, 150V, 0.25% +/-Tol, -25,25ppm/Cel, 1206,	Fixed Resistor, Thin Film, 0.125W, 127ohm, 150V, 0.25% +/-Tol, -25,25ppm/Cel, 1206,
Reach Compliance Code	unknow	unknow	unknow	unknow	compliant	compliant
Number of terminals	3	3	3	3	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	155 °C	155 °C
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMT	SMT
surface mount	YES	YES	YES	YES	YES	YES
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	-
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A	-	-
Collector-based maximum capacity	1.6 pF	1.6 pF	1.6 pF	1.6 pF	-	-
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V	-	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	-
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	-	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	-
Number of components	1	1	1	1	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Polarity/channel type	PNP	PNP	PNP	PNP	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-	-
Terminal location	DUAL	DUAL	DUAL	DUAL	-	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	-
Nominal transition frequency (fT)	750 MHz	750 MHz	750 MHz	750 MHz	-	-
Base Number Matches	1	1	1	1	-	-
ECCN code	-	EAR99	EAR99	-	EAR99	EAR99

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