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UF840-TQ2-R

Description
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size419KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UF840-TQ2-R Overview

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

UF840-TQ2-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
Other featuresAVALANCE RATED
Avalanche Energy Efficiency Rating (Eas)510 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

UF840-TQ2-R Preview

UNISONIC TECHNOLOGIES CO., LTD
UF840
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET
1
1
TO-263
TO-220
Power MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATURES
* 8A, 500V, Low R
DS(ON)
=0.85Ω
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
1
TO-220F
1
TO-220F1
Lead-free:
UF840L
Halogen-free: UF840G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
Halogen Free
UF840-TA3-T
UF840L-TA3-T
UF840G-TA3-T
UF840-TF1-T
UF840L-TF1-T
UF840G-TF1-T
UF840-TF3-T
UF840L-TF3-T
UF840G-TF3-T
UF840-TQ2-R
UF840L-TQ2-R
UF840G-TQ2-R
UF840-TQ2-T
UF840L-TQ2-T
UF840G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-047,E
UF840
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C, unless Otherwise Specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (T
J
=25°C ~125°C)
V
DSS
500
V
Drain to Gate Voltage (R
GS
= 20kΩ, T
J
=25°C ~125°C)
V
DGR
500
V
Gate to Source Voltage
V
GSS
±30
V
Continuous
I
D
8.0
A
Drain Current
Pulsed
I
DM
32
A
TO-220
134
W
Power Dissipation (T
C
=25°C)
P
D
TO-220F/TO-220F1
44
W
TO-263
134
W
Single Pulse Avalanche Energy
E
AS
510
mJ
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
TO-263
TO-220
TO-220F/TO-220F1
TO-263
SYMBOL
θ
JA
RATINGS
62.5
62.5
62.5
0.93
2.86
0.93
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Case
θ
Jc
ELECTRICAL SPECIFICATIONS
(T
a
=25°C, unless Otherwise Specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BV
DSS
I
D
= 250μA, V
GS
= 0V
V
GS(TH)
V
GS
= V
DS
, I
D
= 250μA
I
D(ON)
V
DS
> I
D(ON)
x R
DS(ON)MAX
, V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
DSS
V
DS
=0.8xRated BV
DSS
,V
GS
=0V,T
J
= 125°C
I
GSS
V
GS
= ±30V
MIN TYP MAX UNIT
500
V
2
4
V
8
A
25
μA
250 µA
±100 nA
0.8
15
50
21
20
42
7
22
1225
200
85
0.85
21
74
35
30
63
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
Gate-Source Leakage Current
Static Drain-Source On-State
R
DS(ON)
I
D
= 4.4A, V
GS
= 10V
Resistance (Note 1)
Turn-On Delay Time
t
DLY(ON)
Turn-Off Delay Time
t
DLY(OFF)
V
DD
=250V, I
D
8A, R
G
= 9.1Ω, R
L
=30Ω
(Note 2)
Turn-On Rise Time
t
R
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G(TOT)
V
GS
=10V, I
D
=8A,V
DS
=0.8 x Rated BV
DSS
Gate-Source Charge
Q
GS
I
G(REF)
=1.5mA (Note 3)
Gate-Drain Charge
Q
GD
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-047,E
UF840
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
Drain Inductance
Measured from the contact screw on tab to center of die
L
D
Measured from the drain lead(6mm from package) to center of die
Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L
S
Remark:
Modified MOSFET symbol showing the internal devices inductances as below.
Power MOSFET
MIN TYP MAX UNIT
3.5
4.5
7.5
nH
nH
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage(Note 1)
V
SD
T
J
= 25°C, I
SD
= 8.0A, V
GS
= 0V
2
V
Continuous Source to Drain Current
I
SD
8
A
Note 2
Pulse Source to Drain Current
I
SDM
32
A
Reverse Recovery Time
t
RR
T
J
= 25°C, I
SD
= 8.0A, dI
SD
/dt = 100A/μs
210 475 970 ns
Reverse Recovery Charge
Q
RR
T
J
= 25°C, I
SD
= 8.0A, dI
SD
/dt = 100A/μs
2
4.6 8.2
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-047,E
UF840
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNCLAMPED ENERGY TEST CIRCUIT
UNCLAMPED ENERGY WAVEFORMS
SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-047,E
UF840
TEST CIRCUITS AND WAVEFORMS (Cont.)
t
ON
t
DLY(ON)
t
R
V
DS
90%
t
OFF
t
DLY(OFF)
t
F
Power MOSFET
90%
0
10%
90%
10%
V
GS
0
10%
50%
50%
PULSE WIDTH
RESISTIVE SWITCHING WAVEFORMS
GATE CHARGE TEST CIRCUIT
GATE CHARGE WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-047,E

UF840-TQ2-R Related Products

UF840-TQ2-R UF840-TQ2-T UF840-TF1-T
Description Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code D2PAK D2PAK TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 4 4 3
Reach Compliance Code compliant compliant compliant
Other features AVALANCE RATED AVALANCE RATED AVALANCE RATED
Avalanche Energy Efficiency Rating (Eas) 510 mJ 510 mJ 510 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V
Maximum drain current (ID) 8 A 8 A 8 A
Maximum drain-source on-resistance 0.85 Ω 0.85 Ω 0.85 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-220AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 32 A 32 A 32 A
surface mount YES YES NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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