ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
IXUC100N055
V
DSS
= 55 V
I
D25
= 100 A
Ω
R
DS(on)
= 7.7 mΩ
ISOPLUS 220
TM
Symbol
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
Continuous
T
C
= 25°C; Note 1
T
C
= 90°C, Note 1
T
C
= 25°C; Note 1, 2
T
C
= 90°C, Note 1, 2
Package lead current limit
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
55
±20
100
80
100
70
50
V
V
A
A
A
A
A
G = Gate,
S = Source
* Patent pending
G
D
S
Isolated back surface*
D = Drain,
t
500
150
mJ
W
°C
°C
°C
°C
V~
N/lb
g
-55 ... +175
175
-55 ... +125
300
2500
11 ... 65 / 2.4 ...11
2
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
6.1
2
T
J
= 125°C
0.1
±200
7.7 mΩ
4
10
V
µA
mA
nA
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
Low drain to tab capacitance(<15pF)
Unclamped Inductive Switching (UIS)
rated
Applications
Automotive 42V and 12V systems
- electronic switches to replace relays
& fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives
- DC-DC converters, e.g. 12V to 42V, etc.
Power supplies
- DC - DC converters
- Solar inverters
Battery powered systems
- choppers or inverters for motor control in
hand tools
- battery chargers
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force with clips
Symbol
R
DS(on)
V
GS(th)
I
DSS
I
GSS
ph
V
DS
= V
DSS
V
GS
= 0 V
Test Conditions
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±20
V
DC
, V
DS
= 0
as
e-
ou
© 2003 IXYS All rights reserved
DS98760(08/03)
IXUC100N055
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
V
GS
= 10 V, V
DS
= 14 V, I
D
= 50 A
22
36
35
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
,
I
D
= 25 A, R
G
= 10
Ω
115
230
155
1
0.30
nC
nC
nC
ns
ns
ns
ns
K/W
K/W
ISOPLUS220 Outline
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCH
Source-Drain Diode
Symbol
V
SD
t
rr
Test Conditions
I
F
= 50 A, V
GS
= 0 V
Note 3
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
0.9
80
1.5
V
ns
I
F
= 75A, di/dt = -100A/µs, V
DS
= 30 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
6,404,065B1
6,259,123B1
6,162,665
6,306,728B1
6,534,343
ph
as
e-
ou
t
Industrial Control Electronics
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