LE28C010H-200 datasheet, PDF - EEWORLD Datasheet

LE28C010H-200: DescriptionEEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC44; Categorystorage storage; File Size406KB，10 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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LE28C010H-200 Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC44

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	QCCN, LCC44,.65SQ
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
Other features	AUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	S-CQCC-N44
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	44
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC44,.65SQ
Package shape	SQUARE
Package form	CHIP CARRIER
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.00085 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
Maximum write cycle time (tWC)	5 ms

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