A Business Partner of Renesas Electronics Corporation.
NE3513M04
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
FEATURES
R09DS0028EJ0100
Rev.1.00
Oct 18, 2011
Data Sheet
•
Low noise figure and high associated gain:
NF = 0.45 dB TYP., G
a
= 13 dB TYP. @V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
NF = 0.5 dB TYP., G
a
= 12 dB TYP. @V
DS
= 2 V, I
D
= 6 mA, f = 12 GHz (Reference Value)
•
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
•
DBS LNB gain-stage, Mix-stage
•
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3513M04-T2
Order Number
NE3513M04-T2-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
15 kpcs/reel
(Pb-Free)
Quantity
3 kpcs/reel
Marking
V84
Supplying Form
•
Embossed tape 8 mm wide
•
Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
NE3513M04-T2B
NE3513M04-T2B-A
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3513M04-A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Note
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
Ratings
4.0
–3.0
I
DSS
80
125
+125
Unit
V
V
mA
A
mW
°C
°C
Storage Temperature
T
stg
–65 to +125
2
Note: Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8
A Business Partner of Renesas Electronics Corporation.
NE3513M04
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
+1
3
–
TYP.
+2
10
–
MAX.
+3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
gm
NF
G
a
Test Conditions
V
GS
= –3.0 V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
µA
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
MIN.
–
15
–0.2
50
–
11.5
TYP.
0.5
30
–0.5
65
0.45
13
MAX.
10
60
–1.3
–
0.65
–
Unit
µA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(T
A
= +25°C, unless otherwise specified)
Parameter
Noise Figure
Associated Gain
Symbol
NF
G
a
Test Conditions
V
DS
= 2 V, I
D
= 6 mA, f = 12 GHz
Reference Value
0.5
12
Unit
dB
dB
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
Page 2 of 8
A Business Partner of Renesas Electronics Corporation.
NE3513M04
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2 V
250
60
50
Total Power Dissipation P
tot
(mW)
Drain Current I
D
(mA)
125
200
150
125
40
30
20
10
100
50
0
50
100
150
200
250
0
–0.8
–0.6
–0.4
–0.2
0
Ambient Temperature T
A
(°C)
Gate to Source Voltage V
GS
(V)
1.6
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
f = 12 GHz
V
DS
= 2 V
G
a
16
60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Minimum Noise Figure NF
min
(dB)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
14
Drain Current I
D
(mA)
12
10
8
6
Associated Gain G
a
(dB)
50
40
30
20
10
0
0.00
1.00
2.00
V
GS
= 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
3.00
4.00
NF
min
4
2
10
15
20
25
0
30
5
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
V
DS
= 2 V
I
D
= 6 mA
Minimum Noise Figure NF
min
(dB)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
18
16
18
16
G
a
NF
min
2
4
6
8
10
12
14
16
18
4
2
0
20
14
12
10
8
6
G
a
NF
min
2
4
6
8
10
12
14
16
18
4
2
0
20
14
12
10
8
6
Frequency f (GHz)
Frequency f (GHz)
Remark
The graphs indicate nominal characteristics.
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
Page 3 of 8
Associated Gain G
a
(dB)
24
22
20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
24
V
DS
= 2 V
22
I
D
= 10 mA
20
A Business Partner of Renesas Electronics Corporation.
NE3513M04
S-PARAMETERS
S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave
circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
[Device Parameters]
URL http://www2.renesas.com/microwave/
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
Page 4 of 8
A Business Partner of Renesas Electronics Corporation.
NE3513M04
MOUNTING PAD DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
-Reference 1-
0.8
1
0
9
0.
4
0.74
1.
2
1.
0
1.
0
3
φ
0.5 TH
-Reference 2-
1.6
2
3
0.6
1.25
0.5
1
0.6
Remark
The mounting pad layout in this document is for reference only.
R09DS0028EJ0100 Rev.1.00
Oct 18, 2011
4
1.3
Page 5 of 8
Embedded System
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