BC858B-GS18 datasheet, PDF - EEWORLD Datasheet

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BC858B-GS18: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size168KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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BC858B-GS18 Overview

Transistor,

BC858B-GS18 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	200
JESD-609 code	e3
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.31 W
surface mount	YES
Terminal surface	Matte Tin (Sn)

BC858B-GS18 Preview

VISHAY

BC856 to BC859

Vishay Semiconductors

Small Signal Transistors (PNP)

Features

• PNP Silicon Epitaxial Planar Transistors for

switching and AF amplifier applications.

• Especially suited for automatic insertion in thick

and thin-film circuits.

• These transistors are subdivided into three groups

A, B, and C) according to their current gain. The

type BC856 is available in groups A and B, how-

ever, the types

BC857, BC558 and BC859 can be supplied in all

three groups. The BC849 is a low noise type.

• As complementary types, the NPN transistors

BC846...BC849 are recomended.

18978

C 3

E 2

Mechanical Data

Case:

SOT-23 Plastic case

Weight:

approx. 8.8 mg

Marking:

BC856A = 3A

BC858A = 3J

BC856B = 3B

BC858B = 3K

BC858C = 3L

BC857A = 3E

BC857B = 3F

BC857C = 3G

BC859A = 4A

BC859B = 4B

BC859C = 4C

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Pinning:

1 = Base, 2 = Emitter, 3 = Collector

Document Number 85135

Rev. 1.2, 08-Sep-04

www.vishay.com

BC856 to BC859

Vishay Semiconductors

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter

Collector - base voltage

Test condition

Part

BC856

BC857

BC858

BC859

Collector - emitter voltage

(base shorted)

BC856

BC857

BC858

BC859

Collector - emitter voltage

(base open)

BC856

BC857

BC858

BC859

Emitter - base voltage

Collector current

Peak colector current

Peak base current

Peak emitter current

Power dissipation

VISHAY

Symbol

- V

CBO

- V

CBO

- V

CBO

- V

CBO

- V

CES

- V

CES

- V

CES

- V

CES

- V

CEO

- V

CEO

- V

CEO

- V

CEO

- V

EBO

- I

Value

100

200

310

Unit

amb

= 25 °C

tot

Device on fiberglass substrate, see layout on third page.

Maximum Thermal Resistance

Parameter

Thermal resistance junction to

ambient air

Thermal resistance junction to

substrate backside

Junction temperature

Storage temperature range

Test condition

Symbol

θJA

θSB

Value

320

450

150

- 65 to + 150

Unit

°C/W

°C

Device on fiberglass substrate, see layout on third page.

Electrical DC Characteristics

Parameter

Small signal current gain

(current gain group A)

Small signal current gain

(current gain group B)

Small signal current gain

(current gain group C)

Input impedance (current gain

group A)

Input impedance (current gain

group B)

Input impedance (current gain

group C)

Test condition

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

Part

Symbol

1.6

3.2

Min

Typ

220

330

600

2.7

4.5

8.7

4.5

8.5

kΩ

µS

Max

Unit

Output admittance (current gain - V

= 5 V, - I

= 2 mA, f = 1 kHz

group A)

www.vishay.com

Document Number 85135

Rev. 1.2, 08-Sep-04

VISHAY

Parameter

Test condition

Part

Symbol

CEsat

BEsat

BC856

BC857

BC858

BC859

- V

= 80 V, T

= 125 °C

- V

= 50 V, T

= 125 °C

- V

= 30 V, T

= 125 °C

Collector-base cut-off current

- V

= 30 V

- V

= 30 V, T

= 150 °C

BC857

BC858

BC859

CES

CBO

BC856 to BC859

Vishay Semiconductors

Min

Typ

1.5 x 10

-4

2 x 10

-4

3 x 10

-4

150

270

110

200

420

180

290

520

250

700

900

600

660

0.2

750

820

220

450

800

300

650

µA

Max

110

Unit

µS

Output admittance (current gain - V

= 5 V, - I

= 2 mA, f = 1 kHz

group B)

Output admittance (current gain - V

= 5 V, - I

= 2 mA, f = 1 kHz

group C)

Reverse voltage transfer ratio

(current gain group A)

Reverse voltage transfer ratio

(current gain group B)

Reverse voltage transfer ratio

(current gain group C)

DC current gain (current gain

group A)

DC current gain (current gain

group B)

DC current gain (current gain

group C)

DC current gain (current gain

group A)

DC current gain (current gain

group B)

DC current gain (current gain

group C)

Collector saturation voltage

Base saturation voltage

Base - emiter voltage

Collector-emitter cut-off current

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 2 mA, f = 1 kHz

- V

= 5 V, - I

= 10

µA

- V

= 5 V, - I

= 10

µA

- V

= 5 V, - I

= 10

µA

- V

= 5 V, - I

= 2 mA

- V

= 5 V, - I

= 2 mA

- V

= 5 V, - I

= 2 mA

- I

= 10 mA, - I

= 0.5 mA

- I

= 100 mA, - I

= 5 mA

- I

= 10 mA, - I

= 0.5 mA

- I

= 100 mA, - I

= 5 mA

- V

= 5 V, - I

= 2 mA

- V

= 5 V, - I

= 10 mA

- V

= 80 V

- V

= 50 V

- V

= 30 V

Document Number 85135

Rev. 1.2, 08-Sep-04

www.vishay.com

BC856 to BC859

Vishay Semiconductors

Electrical AC Characteristics

Parameter

Gain bandwidth product

Collector - base capacitance

Noise figure

Test condition

- V

= 5 V, - I

= 10 mA,

f = 100 MHz

- V

= 10 V, f = 1 MHz

- V

= 5 V, - I

= 200

µA,

= 2 kΩ, f = 1 kHz,

∆f

= 200 Hz

BC856

Part

Symbol

CBO

Min

Typ

150

Max

VISHAY

Unit

MHz

BC857

BC858

BC859

- V

= 5 V, - I

= 200

µA,

= 2 kΩ,

f = (30 to 15000) Hz

BC859

1.2

www.vishay.com

Document Number 85135

Rev. 1.2, 08-Sep-04

VISHAY

Layout for R

thJA

test

Thickness: Fiberglass 1.5 mm (0.059 in.)

Copper leads 0.3 mm (0.012 in.)

BC856 to BC859

Vishay Semiconductors

7.5 (0.3)

3 (0.12)

1 (0.4)

12 (0.47)

15 (0.59)

0.8 (0.03)

2 (0.8)

1 (0.4)

2 (0.8)

5 (0.2)

1.5 (0.06)

5.1 (0.2)

17451

Typical Characteristics

amb

= 25

°C

unless otherwise specified)

500

400

tot 300

200

100

19195

-3

0.5

0.2

rthSB

R thSB

-1

0.1

0.05

0.02

0.01

0.005

½=

-2

100

TSB

200 °C

19191

-7

10 10

-6

-5

-4

-3

-2

-1

Figure 1. Admissible Power Dissipation vs. Temperature of

Substrate Backside

Figure 2. Pulse Thermal Resistance vs. Pulse Duration

(normalized)

Document Number 85135

Rev. 1.2, 08-Sep-04

www.vishay.com

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BC858B-GS18 Related Products

	BC858B-GS18	BC858A-GS18	BC859B-GS08	BC857C-GS08	BC857B-GS18
Description	Transistor,	Transistor,	Transistor,	Transistor,	Transistor,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Vishay	Vishay	Vishay	Vishay	Vishay
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Configuration	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	200	110	200	420	200
JESD-609 code	e3	e3	e3	e3	e3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.31 W	0.31 W	0.31 W	0.31 W	0.31 W
surface mount	YES	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)

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