Important notice
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-
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DISCRETE SEMICONDUCTORS
DATA SHEET
BCX17; BCX18
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 31
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Saturated switching and driver applications e.g. for
industrial service
•
Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
PINNING
PIN
1
2
3
base
emitter
collector
BCX17; BCX18
DESCRIPTION
handbook, halfpage
3
3
1
MARKING
TYPE NUMBER
BCX17
BCX18
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCX17
BCX18
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
Fig.1 Simplified outline (SOT23) and symbol.
MARKING CODE
(1)
T1*
T2*
Top view
2
1
2
MAM256
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCX17
BCX18
V
CEO
collector-emitter voltage
BCX17
BCX18
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCX17; BCX18
MIN.
MAX.
−50
−30
−45
−25
−5
−500
−1
−200
250
+150
150
+150
V
V
V
V
V
UNIT
mA
A
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−100
mA; V
CE
=
−1
V
I
C
=
−300
mA; V
CE
=
−1
V
I
C
=
−500
mA; V
CE
=
−1
V
V
CEsat
V
BE
C
c
f
T
Note
1. V
BE
decreases by approximately
−2
mV/°C with increasing temperature.
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−1
V; note 1
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
BCX17; BCX18
MIN. TYP. MAX. UNIT
−
−
−
100
70
40
−
−
−
80
−
−
−
−
−
−
−
−
9
−
−100
−5
−100
600
−
−
−620
−1.2
−
−
mV
V
pF
MHz
nA
μA
nA
2004 Jan 16
4
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