BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CES
V
EB
I
C
I
B
I
CM
P
D
BD242B
80
90
BD241C
BD242C
100
115
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector−Emitter Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
5.0
3.0
5.0
1.0
Collector Current
−Continuous
Collector Current
−
Peak
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
40
0.32
W
W/°C
°C
V
V
Operating and Storage
Junction Temperature Range
ESD
−
Human Body Model
ESD
−
Machine Model
T
J
, T
stg
HBM
MM
– 65 to + 150
3B
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
•
•
•
•
High Current Gain
−
Bandwidth Product
Compact TO−220 AB Package
Epoxy Meets UL94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
COMPLEMENTARY
COLLECTOR 2,4
COLLECTOR 2,4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
MARKING
DIAGRAM
TO−220AB
CASE 221A−09
STYLE 1
1
2
AYWW
BD24xxG
3
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
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THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJA
Max
Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
62.5
°C/W
°C/W
R
qJC
3.125
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
Device
BD241CG
BD242BG
BD242CG
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
†
50 Units/Rail
50 Units/Rail
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BD241C/D
August, 2013
−
Rev. 9
1
PD, POWER DISSIPATION (WATTS)
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1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
2. f
T
= |h
fe
|
•
f
test
.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 1)
OFF CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
Current Gain
−
Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Base−Emitter On Voltage
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.6 Adc)
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB
= 0)
(V
CE
= 100 Vdc, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
(V
CE
= 60 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
BD241C (NPN), BD242B (PNP), BD242C (PNP)
Characteristic
10
20
30
40
0
0
20
40
Figure 1. Power Derating
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T
C
, CASE TEMPERATURE (°C)
60
80
BD242B
BD241C, BD242C
BD242B
BD241C, BD242C
BD242B
BD241C, BD242C
100
120
140
Symbol
V
CE(sat)
V
BE(on)
V
CEO
I
CEO
I
EBO
I
CES
h
FE
h
fe
160
f
T
Min
80
100
3.0
20
25
10
Max
200
1.8
1.2
1.0
0.3
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
2
BD241C (NPN), BD242B (PNP), BD242C (PNP)
2.0
TURN‐ON PULSE
APPROX
+ 11 V
V
in
0
V
EB(off)
APPROX
+ 11 V
V
in
t
2
TURN‐OFF PULSE
DUTY CYCLE
[
2.0%
APPROX - 9.0 V
t
1
t
3
V
CC
V
in
R
L
R
K
SCOPE
t, TIME (
μ
s)
1.0
0.7
0.5
0.3
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
C
jd
%
C
eb
- 4.0 V
t
1
v
7.0 ns
100
t
t
2
t
500
ms
t
3
t
15 ns
t
r
@ V
CC
= 10 V
0.1
0.07
0.05
0.03
0.02
0.03
t
d
@ V
BE(off)
= 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
Figure 2. Switching Time Equivalent Circuit
1.0
0.7
0.5
0.3
0.2
0.1
0.05
0.02
0.01
0.02
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
D = 0.5
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
P
(pk)
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500 1.0 k
Figure 4. Thermal Response
10
5.0
5.0 ms
1.0 ms
100
ms
2.0
1.0
SECOND BREAKDOWN
LIMITED @ T
J
v
150°C
THERMAL LIMITATION @ T
C
= 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED V
CEO
BD241C, BD242C
10
20
50
I
C
, COLLECTOR CURRENT (AMP)
100
0.5
0.2
0.1
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150°C, T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
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3
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0 3.0
I
B1
= I
B2
I
C
/I
B
= 10
t
s′
= t
s
- 1/8 t
f
T
J
= 25°C
CAPACITANCE (pF)
300
T
J
= + 25°C
200
t
s′
t
f
@ V
CC
= 30 V
t, TIME (
μ
s)
100
C
eb
70
50
C
cb
t
f
@ V
CC
= 10 V
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn−Off Time
500
300
hFE, DC CURRENT GAIN
T
J
= 150°C
25°C
- 55°C
V
CE
= 2.0 V
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
Figure 7. Capacitance
T
J
= 25°C
1.6
100
70
50
30
1.2
I
C
= 0.3 A
1.0 A
3.0 A
0.8
10
7.0
5.0
0.03
0.4
0.05 0.07 0.1
0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
0
1.0
2.0
5.0
10
20
50
100 200
I
B
, BASE CURRENT (mA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 2.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
T
J
= 25°C
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0
q
VB
FOR V
BE
*q
VC
FOR V
CE(sat)
*APPLIES FOR I
C
/I
B
≤
5.0
T
J
= - 65°C TO + 150°C
0
0.003 0.005 0.01 0.020.03 0.05
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
BD241C (NPN), BD242B (PNP), BD242C (PNP)
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
10
0
10
-1
REVERSE
10
- 2
25°C
I
CES
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5
+ 0.6
FORWARD
V
CE
= 30 V
T
J
= 150°C
100°C
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
10
7
I
C
= 10 x I
CES
10
6
V
CE
= 30 V
10
5
I
C
≈
I
CES
I
C
= 2 x I
CES
10
4
10
3
10
2
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
10
- 3
- 0.4 - 0.3 - 0.2 - 0.1
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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