KM416V254BLLT-7 datasheet, PDF

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KM416V254BLLT-7: DescriptionEDO DRAM, 256KX16, 70ns, CMOS, PDSO40, PLASTIC, TSOP2-40; Categorystorage storage; File Size825KB，36 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM416V254BLLT-7 Overview

EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, PLASTIC, TSOP2-40

KM416V254BLLT-7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP40/44,.46,32
Contacts	40
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
length	18.41 mm
memory density	4194304 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP40/44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.0001 A
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm

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Description	EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, PLASTIC, TSOP2-40	EDO DRAM, 256KX16, 80ns, CMOS, PDSO40, PLASTIC, TSOP2-40	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, PLASTIC, SOJ-40	EDO DRAM, 256KX16, 80ns, CMOS, PDSO40, PLASTIC, SOJ-40	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, PLASTIC, TSOP2-40	EDO DRAM, 256KX16, 80ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-40	EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, PLASTIC, SOJ-40	EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-40	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-40
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	TSOP2	SOJ	SOJ	TSOP2	TSOP2	SOJ	TSOP2	TSOP2
package instruction	TSOP2, TSOP40/44,.46,32	TSOP2, TSOP40/44,.46,32	SOJ, SOJ40,.44	SOJ, SOJ40,.44	TSOP2, TSOP40/44,.46,32	TSOP2-R, TSOP40/44,.46,32	SOJ, SOJ40,.44	TSOP2-R, TSOP40/44,.46,32	TSOP2-R, TSOP40/44,.46,32
Contacts	40	40	40	40	40	40	40	40	40
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	70 ns	80 ns	60 ns	80 ns	60 ns	80 ns	70 ns	70 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G40	R-PDSO-G40	R-PDSO-J40	R-PDSO-J40	R-PDSO-G40	R-PDSO-G40	R-PDSO-J40	R-PDSO-G40	R-PDSO-G40
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	18.41 mm	18.41 mm	25.535 mm	25.535 mm	18.41 mm	18.41 mm	25.535 mm	18.41 mm	18.41 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
memory width	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	40	40	40	40	40	40	40	40	40
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	SOJ	SOJ	TSOP2	TSOP2-R	SOJ	TSOP2-R	TSOP2-R
Encapsulate equivalent code	TSOP40/44,.46,32	TSOP40/44,.46,32	SOJ40,.44	SOJ40,.44	TSOP40/44,.46,32	TSOP40/44,.46,32	SOJ40,.44	TSOP40/44,.46,32	TSOP40/44,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512	512	512	512
Maximum seat height	1.2 mm	1.2 mm	3.56 mm	3.56 mm	1.2 mm	1.2 mm	3.56 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.065 mA	0.06 mA	0.07 mA	0.06 mA	0.07 mA	0.06 mA	0.065 mA	0.065 mA	0.07 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	J BEND	J BEND	GULL WING	GULL WING	J BEND	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	1.27 mm	1.27 mm	0.8 mm	0.8 mm	1.27 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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