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NSF03D60

Description
1.2 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size261KB,1 Pages
ManufacturerNDK
Websitehttp://www.ndk.com/en/
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NSF03D60 Overview

1.2 A, 600 V, SILICON, RECTIFIER DIODE

3A Avg.
Item
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
Alumina
平均整流電流
Substrate mounted
Average
Rectified
Forward Current
R.M.S. Forward Current
Surge Forward Current
動 ½ 接 合 温 度 範 囲
Operating Junction Temperature Range
Storage Temperature Range
600 Volts
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
45
50Hz 正弦半波, 抵抗負荷
50Hz Half Sine Wave, Resistance Load
FRED
Conditions
600
Ta=25℃
Tl=89℃
4.71
50Hz正弦半波,1サイクル,非くり返し
50Hz Half Sine Wave,1cycle, Non-repetitive
NSF03D60
■OUTLINE DRAWING(mm)
Unit
V
1.2
3.0
A
A
A
A
■最大定格 Maximum Ratings
−40∼+150
−40∼+150
■電気的・熱的特性
Item
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
Electrical/ Thermal Characteristics
Symbol
I
RM
V
FM
tr r
R
th(j-a)
R
th(j-l)
Conditions
T
j
=25℃, V
RM
=V
RRM
T
j
=25℃, I
FM
=3A
I
FM
=3A, -di/dt=50 A/μs, T
j
=25℃
接合部½周囲間
Junction to Ambient
接合部½リード間
Junction to Lead
■APPROX. NET WEIGHT:0.16 g
Min.
Typ.
Max.
20
1.45
45
89
13
Unit
μA
V
ns
℃/W
℃/W
Alumina Substrate
*アルミナ基板実装/Alumina Substrate Mounted (Soldering Lands = 2 × 3.5 mm, Both Sides)
■定格・特性曲線
FIG.1
FIG.2
FIG.3
FIG.4
FIG.5
58

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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