G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V
®
FREDFET
BVFR
TO
-
24
7
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
D
3
PAK
SVFR
• Faster Switching
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
• Avalanche Energy Rated
• TO-247 or Surface Mount D
3
Pak
G
D
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT4016B_SVFR(G)
UNIT
Volts
Amps
400
27
108
±30
±40
280
2.24
-55 to 150
300
27
30
4
1
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
400
27
0.16
250
1000
2
4
±100
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 14A)
Ohms
µA
2-2006
050-5634 Rev A
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 320V V
DSS
, V
GS
= 0V, T
C
=125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
APT Website - http://www.advancedpower.com
nA
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT4016B_SVFR(G)
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 200V
I
D
= 27A @ 25°C
V
GS
= 15V
V
DD
= 200V
I
D
= 27A @ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
3350
510
200
135
24
60
11
10
48
6
ns
nC
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
27
108
1.3
15
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -27A)
5
Peak Diode Recovery
dv
/
dt
Reverse Recovery Time
(I
S
= -27A,
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -27A,
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -27A,
di
/
dt
= 100A/µs)
t
rr
Q
rr
I
RRM
250
450
1.8
6.0
14
24
µC
Amps
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.45
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 3.32mH, R = 25Ω, Peak I = 27A
temperature.
j
G
L
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv
/
numbers reflect the limitations of the test circuit rather than the
dt
device itself.
IS
≤
-
ID
Cont.
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
Repetitive Rating: Pulse width limited by maximum junction
0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.01
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.1
0.05
050-5634 Rev A
2-2006
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
Typical Performance Curves
50
VGS=6V, 7V, 10V & 15V
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
APT4016B_SVFR(G)
50
VGS=15V
5.5V
40
VGS=10V
VGS=7V
30
5V
20
5.5V
6V
40
30
5V
20
10
4.5V
10
4.5V
4V
0
40
80
120
160
200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
4V
0
2
4
6
8
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.0
V
GS
0
0
50
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
TJ = +125°C
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
40
1.8
1.6
1.4
30
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
20
1.2
1.0
0.8
10
TJ = +125°C
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
30
I
D
, DRAIN CURRENT (AMPERES)
0
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
24
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
1.10
18
1.05
12
1.00
6
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D
D
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
GS
= 10V
2.0
1.1
1.0
0.9
0.8
0.7
10-2005
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
050-5634 Rev A
APT4016B_SVFR(G)
150
100
I
D
, DRAIN CURRENT (AMPERES)
10,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
C, CAPACITANCE (pF)
5,000
Ciss
10
5
1mS
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
1,000
500
Coss
Crss
.1
1
5 10
50 100
400
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
VDS=80V
VDS=200V
12
VDS=320V
8
200
100
50
TJ =+150°C
TJ =+25°C
16
10
5
1
.5
4
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 (BVFR) Package Outline
e1 SAC: Tin, Silver, Copper
D PAK (SVFR) Package Outline
e3 100% Sn
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
10-2005
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
1.22 (.048)
1.32 (.052)
3.81 (.150)
4.06 (.160)
(Base of Lead)
050-5634 Rev A
Gate
Drain
Source
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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