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BFG325_15

Description
NPN 14 GHz wideband transistor
File Size69KB,12 Pages
ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.
Websitehttp://www.jmnic.com/
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BFG325_15 Overview

NPN 14 GHz wideband transistor

BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
s
s
s
s
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
s
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x
analog and digital cellular telephones
x
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x
radar detectors
x
pagers
x
Satellite Antenna TeleVision (SATV) tuners
x
repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1:
V
CBO
V
CEO
I
C
P
tot
h
FE
C
CBS
f
T
G
max
Quick reference data
Conditions
open emitter
open base
T
sp
90
°C
I
C
= 15 mA; V
CE
= 3 V;
T
j
= 25
°C
V
CB
= 5 V; f = 1 MHz;
emitter grounded
I
C
= 15 mA; V
CE
= 3 V;
f = 1 GHz; T
amb
= 25
°C
I
C
= 15 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
°C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
[2]
Min
-
-
-
-
60
-
-
-
Typ
-
-
-
-
100
0.26
14
18.3
Max
15
6
35
210
200
0.4
-
-
Unit
V
V
mA
mW
pF
GHz
dB

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