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K3P5C2000D-SC12

Description
MASK ROM, 512KX32, 120ns, CMOS, PDSO70, 0.500 INCH, SSOP-70
Categorystorage    storage   
File Size63KB，4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K3P5C2000D-SC12 Overview

MASK ROM, 512KX32, 120ns, CMOS, PDSO70, 0.500 INCH, SSOP-70

K3P5C2000D-SC12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSSOP
package instructionSSOP, SOP70,.63,32
Contacts70
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time120 ns
Other featuresALSO CONFIGURABLE AS 512K X 32
Spare memory width16
JESD-30 codeR-PDSO-G70
JESD-609 codee0
length28.57 mm
memory density16777216 bit
Memory IC TypeMASK ROM
memory width32
Number of functions1
Number of terminals70
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeSSOP
Encapsulate equivalent codeSOP70,.63,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height3.1 mm
Maximum standby current0.00005 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12.7 mm

K3P5C2000D-SC12 Preview

K3P5C2000D-SC
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM
FEATURES
•
Switchable organization
1,048,576 x 16(word mode)
524,288 x 32(double word mode)
•
Fast access time
Random Access : 100ns(Max.)
Page Access
: 30ns(Max.)
4 double Words / 8 Words page access
•
Supply voltage : single +5V
•
Current consumption
Operating : 150mA(Max.)
Standby : 50µA(Max.)
•
Fully static operation
•
All inputs and outputs TTL compatible
•
Three state outputs
•
Package
-. K3P5C2000D-SC : 70-SSOP-500
CMOS MASK ROM
GENERAL DESCRIPTION
The K3P5C2000D-SC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 1,048,576 x 16 bit(word mode) or is
524,288 x 32 bit(double word mode) depending on WORD volt-
age level.(See mode selection table)
This device includes page read mode function, page read mode
allows 4 double words (or 8 words) of data to read fast in the
same page, CE and A
2
~ A
18
should not be changed.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator. The K3P5C2000D-SC is
packaged in a 70-SSOP.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
A
18
.
.
.
.
.
.
.
.
A
2
A
0
,A
1
A
-1
CE
OE
WORD
Pin Name
A
0
- A
1
A
2
- A
18
Q
0
- Q
30
Q
31
/A
-1
WORD
CE
OE
V
CC
V
SS
N.C
X
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(524,288x32/
1,048,576x16)
Y
BUFFERS
AND
DECODER
SENSE AMP.
DATA OUT
BUFFERS
. . .
Q
0
/Q
16
Q
15
/Q
31
CONTROL
LOGIC
Pin Function
Page Address Inputs
Address Inputs
Data Outputs
Output 31(Double word mode)/
LSB Address(Word mode)
Double word/Word mode selection
Chip Enable
Output Enable
Power (+5V)
Ground
No Connection
A
0
A
1
A
2
A
3
A
4
A
5
V
CC
Q
0
Q
16
Q
1
Q
17
V
SS
V
CC
Q
2
Q
18
Q
3
Q
19
Q
4
Q
20
Q
5
Q
21
V
SS
V
CC
Q
6
Q
22
Q
7
Q
23
V
SS
A
6
A
7
A
8
A
9
A
10
A
11
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
SSOP
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
N.C
N.C
N.C
WORD
OE
CE
V
SS
Q
31
/A
-1
Q
15
Q
30
Q
14
V
SS
V
CC
Q
29
Q
13
Q
28
Q
12
Q
27
Q
11
Q
26
Q
10
V
SS
V
CC
Q
25
Q
9
Q
24
Q
8
V
CC
N.C
A
18
A
17
A
16
A
15
A
14
A
13
K3P5C2000D-SC
K3P5C2000D-SC
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on Any Pin Relative to V
SS
Temperature Under Bias
Storage Temperature
Symbol
V
IN
T
BIAS
T
STG
Rating
CMOS MASK ROM
Unit
V
°C
°C
-0.3 to +7.0
-10 to +85
-55 to +150
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con-
ditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70°C)
Item
Supply Voltage
Supply Voltage
Symbol
V
CC
V
SS
Min
4.5
0
Typ
5.0
0
Max
5.5
0
Unit
V
V
DC CHARACTERISTICS
Parameter
Operating Current
Standby Current(TTL)
Standby Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage, All Inputs
Input Low Voltage, All Inputs
Output High Voltage Level
Output Low Voltage Level
Symbol
I
CC
I
SB1
I
SB2
I
LI
I
LO
V
IH
V
IL
V
OH
V
OL
I
OH
=-400µA
I
OL
=2.1mA
Test Conditions
Cycle=5MHz, all outputs open
CE=OE=V
IL
, V
IN
=0.6V to 2.4V (AC Test Condition)
CE=V
IH
, all outputs open
CE=V
CC
, all outputs open
V
IN
=0 to V
CC
V
OUT
=0 to V
CC
Min
-
-
-
-
-
2.2
-0.3
2.4
-
Max
150
1
50
10
10
V
CC
+0.3
0.8
-
0.4
Unit
mA
mA
µA
µA
µA
V
V
V
V
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
MODE SELECTION
CE
H
L
L
OE
X
H
L
L
Input
Operating
WORD
X
X
H
Q
31
/A
-1
X
X
Output
Mode
Standby
Operating
Operating
Data
High-Z
High-Z
Q
0
~Q
31
:Dout
Q
0
~Q
15
: Dout
Q
16
~Q
30
: Hi-Z
Power
Standby
Active
Active
Active
CAPACITANCE
(T
A
=25°C, f=1.0MHz)
Item
Output Capacitance
Input Capacitance
Symbol
C
OUT
C
IN
Test Conditions
V
OUT
=0V
V
IN
=0V
Min
-
-
Max
12
12
Unit
pF
pF
NOTE
: Capacitance is periodically sampled and not 100% tested.
K3P5C2000D-SC
TEST CONDITIONS
Item
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
Value
CMOS MASK ROM
AC CHARACTERISTICS
(T
A
=0°C to 70°C, V
CC
=5V±10%, unless otherwise noted.)
0.6V to 2.4V
10ns
0.8V and 2.0V
1 TTL Gate and C
L
=100pF
READ CYCLE
Item
Read Cycle Time
Chip Enable Access Time
Address Access Time
Page Address Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
Output Hold from Address Change
Symbol
t
RC
t
ACE
t
AA
t
PA
K3P5C2000D-SC10
Min
100
100
100
30
30
20
0
Max
K3P5C2000D-SC12
Min
120
120
120
50
50
20
0
Max
K3P5C2000D-SC15
Min
150
150
150
70
70
30
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
t
OE
t
DF
t
OH
NOTE
: Page Address is determined as below.
Double Word mode (WORD=V
IH
) : A
0
, A
1
Word mode (WORD=V
IL
) : A
-1
, A
0
, A
1
K3P5C2000D-SC
TIMING DIAGRAM
READ
CMOS MASK ROM
ADD
A
0
~A
18
A
-1(*1)
t
ACE
ADD1
t
RC
ADD2
t
DF(*3)
CE
t
OE
t
AA
OE
t
OH
D
OUT
D
0
~D
15
D
16
~D
31(*2)
VALID DATA
VALID DATA
PAGE READ
≈
CE
t
DF(*3)
OE
ADD
A
0,
A
1
A
-1(*1)
t
AA
1 st
t
PA
2 nd
3 rd
≈
VALID DATA
VALID DATA
VALID DATA
VALID DATA
NOTES :
*1.Word Mode only. A
-1
is Least Significant Bit Address.(WORD = V
IL
)
*2.Double Word Mode only.(WORD = V
IH
)
*3. t
DF
is defined as the time at which the outputs achieve the open circuit condition and is not referenced to V
OH
or V
OL
level.
≈
≈
≈
D
OUT
D
0
~D
15
D
16
~D
31(*2)
≈
ADD
A
2
~A
18
≈
≈
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K3P5C2000D-SC12 Related Products

K3P5C2000D-SC12 K3P5C2000D-SC10 ADAS1000_17
Description MASK ROM, 512KX32, 120ns, CMOS, PDSO70, 0.500 INCH, SSOP-70 MASK ROM, 512KX32, 100ns, CMOS, PDSO70, 0.500 INCH, SSOP-70 Low Power, Five Electrode Electrocardiogram (ECG) Analog Front End
Is it Rohs certified? incompatible incompatible -
Maker SAMSUNG SAMSUNG -
Parts packaging code SSOP SSOP -
package instruction SSOP, SOP70,.63,32 SSOP, SOP70,.63,32 -
Contacts 70 70 -
Reach Compliance Code compliant compliant -
ECCN code EAR99 EAR99 -
Maximum access time 120 ns 100 ns -
Other features ALSO CONFIGURABLE AS 512K X 32 ALSO CONFIGURABLE AS 512K X 32 -
Spare memory width 16 16 -
JESD-30 code R-PDSO-G70 R-PDSO-G70 -
JESD-609 code e0 e0 -
length 28.57 mm 28.57 mm -
memory density 16777216 bit 16777216 bit -
Memory IC Type MASK ROM MASK ROM -
memory width 32 32 -
Number of functions 1 1 -
Number of terminals 70 70 -
word count 524288 words 524288 words -
character code 512000 512000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C -
organize 512KX32 512KX32 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code SSOP SSOP -
Encapsulate equivalent code SOP70,.63,32 SOP70,.63,32 -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH -
Parallel/Serial PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
power supply 5 V 5 V -
Certification status Not Qualified Not Qualified -
Maximum seat height 3.1 mm 3.1 mm -
Maximum standby current 0.00005 A 0.00005 A -
Maximum slew rate 0.15 mA 0.15 mA -
Maximum supply voltage (Vsup) 5.5 V 5.5 V -
Minimum supply voltage (Vsup) 4.5 V 4.5 V -
Nominal supply voltage (Vsup) 5 V 5 V -
surface mount YES YES -
technology CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING GULL WING -
Terminal pitch 0.8 mm 0.8 mm -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
width 12.7 mm 12.7 mm -

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