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DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD43256B-X
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
μ
PD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
The
μ
PD43256B-X is an extended-operating-temperature version of the
μ
PD43256B (X version : T
A
= –25 to +85°C).
And A and B versions are low voltage operations. Battery backup is available.
The
μ
PD43256B-X is packed in 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
Features
•
32,768 words by 8 bits organization
•
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
•
Operating ambient temperature: T
A
= –25 to +85
°C
•
Low voltage operation (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
•
Low V
CC
data retention: 2.0 V (MIN.)
•
/OE input for easy application
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
−25
to +85
At operating
mA (MAX.)
45
Supply current
At standby
At data retention
μ
A (MAX.)
50
μ
A (MAX.)
Note1
2
μ
PD43256B-xxX
μ
PD43256B-AxxX
μ
PD43256B-BxxX
Note2
85
Note2
70, 85
, 100, 120
Note2
Note2
4.5 to 5.5
3.0 to 5.5
2.7 to 5.5
100, 150
40
Notes 1.
T
A
≤
40
°C,
V
CC
= 3.0 V
2.
100 ns (MAX.) (V
CC
= 4.5 to 5.5 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M11012EJ7V0DS00 (7th edition)
Date Published November 2008
Printed in Japan
1995
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EEWORLD
