30GFA40 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> 30GFA40

Preview

30GFA40: DescriptionFast Recovery Diode; CategoryDiscrete semiconductor diode; File Size530KB，2 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

Download Datasheet Parametric View All

30GFA40 Overview

Fast Recovery Diode

30GFA40 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
package instruction	O-PALF-W2
Reach Compliance Code	unknow
Other features	LOW NOISE
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	60 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.35 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	20 µA
Maximum reverse recovery time	0.03 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

Preview

Download Datasheet

View All

3A Avg. 400Volts

30GFA40

Fast Recovery Diode

外½寸法図

DSE-13049（1/2）

構造：拡散型シリコンダイオード（FRD），リード線型

Construction :Diffusion-type Silicon Diode，Axial Lead Type

OUTLINE DRAWING

Dimension : mm

Package : Axial 7

用途：高周波整流用

Application : High-Frequency Rectification

特長

½ノイズ

高速

trr=30ns

Feature

Low Noise

High Speed Recovery

trr=30ns

■

Weight

: 1.05g（typ.）

Flammability : Epoxy Resin=UL94V-0 Recognized

■ 絶対最大定格（表示無き場合

項目

Item

くり返しピーク逆電圧

Repetitive Peak Reverse Voltage

非くり返しピーク逆電圧

Non-Repetitive Peak Reverse Voltage

平均整流電流

Average Rectified Output Current

実効順電流

RMS Forward Current

サージ順電流

Surge Forward Current

動½接合温度範囲

Operation Junction Temperature Range

保存温度範囲

Storage Temperature Range

Ta=25℃）

Absolute Maximum Ratings (Ta = 25

o

C unless otherwise stated)

記号

Symbol

条件

Conditions

定格値

Rating

単½

Units

V

RRM

V

RSM

50Hz 正弦半波通電

抵抗負荷

Half Sine Wave，

Resistive Load

－

Ta=30℃

*1

400

440

1.35

V

I

O

T1=92℃

(T1:Lead Temperature)

－

A

3.0

4.71

60

-40½+150

A

℃

I

F(RMS)

I

FSM

T

jw

T

stg

50Hz 正弦半波 1 サイクル非繰り返し

50Hz half Sine Wave，1 cycle，Non-repetitive

－

■電気的・熱的特性

Electrical / Thermal Characteristics

項目

Item

ピーク逆電流

Peak Reverse Current

ピーク順電圧

Peak Forward Voltage

逆回復時間

Reverse Recovery Time

熱抵抗

Thermal Resistance

記号

Symbol

条件

Conditions

最小値

min.

代表値

typ.

最大値

max.

単½

Units

I

RM

V

FM

t

rr

Rth(j-a)

Rth(j-l)

V

RM

=V

RRM，

T

j

=25℃

I

FM

=3.0A，T

j

=25℃

I

FM

=3.0A，-di/dt=50A/µ

s，

T

j

=25℃

接合部・周囲間

Junction to Ambient

*1

接合部・リード間

Junction to Lead

-

20

1.25

30

µA

V

ns

℃/W

-

90

15

*1 : 単½フィン無し／Without

Fin or P.C. Board

●

本資料の記載内容は½品改良などのため予告なく変更することがあります

。

●

The content specified herein is subject to change without notice.

Date of issue:2013.10.2

Recommended Resources

Table printing machine control circuit

Broadband high frequency signal amplifier

MAX9489 charging circuit diagram

Peak type AGC circuit

Using infrared detector to measure and control temperature circuit

Three diode rectifier energy consumption braking circuit

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components