BA158GA1G datasheet, PDF - EEWORLD Datasheet

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BA158GA1G: DescriptionRectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN; CategoryDiscrete semiconductor diode; File Size370KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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BA158GA1G Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

BA158GA1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	DO-41, 2 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BA157G thru BA159G

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Glass passivated chip junction

- High current capability, Low VF

- High reliability

- High surge current capability

- Low power loss, high efficiency

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Glass Passivated Fast Recovery Rectifiers

MECHANICAL DATA

Case:

DO-204AL (DO-41)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight:

0.33 g (approximately)

DO-204AL (DO-41)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@1A

Maximum reverse current @ rated VR

=25

℃

=125

℃

SYMBOL

RRM

RMS

F(AV)

FSM

Trr

θJA

STG

150

- 55 to +150

BA157G

400

280

400

BA158G

600

420

600

1.2

100

BA159G

1000

700

1000

UNIT

μA

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

250

C/W

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Document Number: DS_D1312026

Version: F13

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