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NE5531079A-T1

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size2MB,9 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
Download Datasheet Parametric Compare View All

NE5531079A-T1 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

NE5531079A-T1 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage25 V
Processing package descriptionLEAD FREE, 79A, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeMICROWAVE
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationQUAD
Packaging MaterialsUNSPECIFIED
structureSINGLE
Shell connectionSOURCE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption35 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF POWER
Maximum leakage current3 A
highest frequency bandULTRA HIGH FREQUENCY BAND
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
efficiency at 460 MHz with 7.5 V supply voltage.
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added
FEATURES
• High output power
• High linear gain
• Surface mount package
• Single supply
• High power added efficiency :
add
= 68% TYP. (V
DS
= 7.5 V, I
Dset
= 200 mA, f = 460 MHz, P
in
= 25 dBm)
: G
L
= 20.5 dB TYP. (V
DS
= 7.5 V, I
Dset
= 200 mA, f = 460 MHz, P
in
= 10 dBm)
: 5.7
5.7
1.1 mm MAX.
: V
DS
= 7.5 V MAX.
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
Part Number
NE5531079A
Order Number
NE5531079A-A
CO
NE5531079A-T1-A
NE5531079A-T1A-A
NE5531079A-T1
NE5531079A-T1A
DI
S
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS
NT
IN
U
Package
Marking
W5
Supplying Form
79A (Pb-Free)
• 12 mm wide embossed taping
• 12 mm wide embossed taping
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Qty 5 kpcs/reel
: P
out
= 40.0 dBm TYP. (V
DS
= 7.5 V, I
Dset
= 200 mA, f = 460 MHz, P
in
= 25 dBm)
• Gate pin face the perforation side of the tape
• Gate pin face the perforation side of the tape
• Gate pin face the perforation side of the tape
ED

NE5531079A-T1 Related Products

NE5531079A-T1 NE5531079A NE5531079A-T1A
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals 4 4 4
Minimum breakdown voltage 25 V 25 V 25 V
Processing package description LEAD FREE, 79A, 4 PIN LEAD FREE, 79A, 4 PIN LEAD FREE, 79A, 4 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size MICROWAVE MICROWAVE MICROWAVE
surface mount Yes Yes Yes
Terminal form FLAT FLAT FLAT
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal location QUAD QUAD QUAD
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED
structure SINGLE SINGLE SINGLE
Shell connection SOURCE SOURCE SOURCE
Number of components 1 1 1
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 35 W 35 W 35 W
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type RF POWER RF POWER RF POWER
Maximum leakage current 3 A 3 A 3 A
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
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