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BCW66G_NL

Description
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size44KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BCW66G_NL Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-23, 3 PIN

BCW66G_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns

BCW66G_NL Preview

BCW66G
BCW66G
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
collector currents to 500mA.
• Sourced from process 13.
3
2
1
SOT-23
Mark: EG
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
45
75
5
1
- 55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 10µA
I
C
= 10mA
I
E
= 10µA
V
CB
= 45V, I
E
= 0
V
CB
= 45V, I
E
= 0
V
EB
= 4V
V
CE
= 10V, I
C
= 100µA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 2V, I
C
= 500mA
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1MHz
V
EB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
V
CE
= 5V, I
C
= 0.2mA, R
S
= 1kΩ,
f = 1KHz, BW = 200Hz
I
B1
= I
B2
= 15mA
I
C
= 150mA, R
L
= 150Ω
100
10
100
400
50
110
160
60
T
A
= 150°C
Min.
75
45
5
20
20
20
Typ.
Max.
Units
V
V
V
nA
µA
nA
400
0.3
0.7
2
12
80
V
V
pF
pF
MHz
dB
ns
V
CE
(sat)
V
BE
(sat)
C
obo
C
ibo
f
T
NF
t
on
t
off
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Noise Figure
Turn-On Time
Turn-Off Time
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BCW66G
Thermal Characteristics
Symbol
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Min.
Typ.
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BCW66G
Package Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST
®
FASTr™
CoolFET™
CROSSVOLT™
FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
2
CMOS™
E
HiSeC™
EnSigna™
I
2
C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
DISCLAIMER
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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