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Datasheet> All Categories > Discrete semiconductor> The transistor> BSS138TC
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BSS138TC

Description
200mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size190KB，5 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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BSS138TC Overview

200mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN

BSS138TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSS138TC Preview

BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
G
S
Source
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
BSS138-7-F
BSS138Q-7-F
Notes:
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
̅
Y or Y = Year (ex: A = 2013)
̅
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
Jun
6
…
…
2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
2016
D
Nov
N
2017
E
Dec
D
BSS138
Document number: DS30144 Rev. 20 - 2
1 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BSS138
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
≤
20KΩ
Gate-Source Voltage
Continuous
Gate-Source Voltage
Non repetitive, Pulse width<50μs
Drain Current
Continuous
Pulsed Drain Current (
10μs pulse duty cycle = 1%)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
Value
50
50
±20
±40
200
1
Units
V
V
V
V
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
⎯
⎯
0.5
⎯
100
⎯
⎯
⎯
⎯
⎯
Typ
75
⎯
⎯
1.2
1.4
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.5
±100
1.5
3.5
⎯
50
25
8.0
20
20
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.22A
V
DS
= 25V, I
D
= 0.2A, f = 1.0KHz
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A, R
GEN
= 50Ω
5. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0.6
0.5
T
j
= 25
°
C
V
GS
= 3.5V
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5 1
1.5
2
2.5
3 3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4
4.5
150
°
C
V
DS
= 1V
-55
°
C
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 3.25V
25
°
C
0.4
V
GS
= 3.0V
0.3
V
GS
= 2.75V
0.2
V
GS
= 2.5V
0.1
0
3
4
5
6
7
8
9 10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
1
2
BSS138
Document number: DS30144 Rev. 20 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BSS138
2.4
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.45
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
V
GS
= 4.5V
I
D
= 0.075A
V
GS
= 10V
I
D
= 0.5A
2.0
1.6
1.2
I
D
= 1mA
0.8
I
D
= 250µA
0.4
-5
45
145
95
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
-25
0
25
50
75 100 125 150
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Variation vs. Ambient Temperature
0
-50
7
6
5
4
3
V
GS
= 2.5V
150
°
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
8
9
8
7
6
5
4
3
2
1
0
0
0.05
-55
°
C
25
°
C
V
GS
= 2.75V
150
°
C
25
°
C
-55
°
C
2
1
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
I
D
, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
0
0.1
0.15
0.25
0.2
I
D
, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
V
GS
= 10V
150
°
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
6
5
150
°
C
3.5
3
2.5
2
1.5
1
0.5
0
4
3
25
°
C
2
25
°
C
-55
°
C
1
0
-55
°
C
0.3
0.5
0.2
0.4
I
D
, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0
0.1
0.3
0.5
0.2
0.4
I
D
, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0
0.1
BSS138
Document number: DS30144 Rev. 20 - 2
3 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BSS138
1
100
V
GS
= 0V
f = 1MHz
I
D
, DIODE CURRENT (A)
C, CAPACITANCE (pF)
0.1
150
°
C
-55
°
C
C
iSS
10
C
OSS
0.01
25
°
C
C
rSS
0.001
0.2
0.4
0.6
0.8
1
1.2
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
1
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
BSS138
Document number: DS30144 Rev. 20 - 2
4 of 5
www.diodes.com
November 2013
© Diodes Incorporated
BSS138
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
BSS138
Document number: DS30144 Rev. 20 - 2
5 of 5
www.diodes.com
November 2013
© Diodes Incorporated
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