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BC548BRLRA

Description
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size169KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC548BRLRA Overview

100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC548BRLRA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionTO-226AA, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC546
65
80
BC547
45
50
6.0
100
625
5.0
1.5
12
–55 to +150
BC548
30
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
BC546
BC546B
BC547A
BC547B
BC547C
BC548B
BC548C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc)
Emitter–Base Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 70 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 35 V, V
BE
= 0)
(V
CE
= 30 V, T
A
= 125°C)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546/547/548
V
(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
0.2
0.2
0.2
15
15
15
4.0
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CES
nA
µA
©
Semiconductor Components Industries, LLC, 2001
242
May, 2001 – Rev. 3
Publication Order Number:
BC546/D
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