IXKK 85N60C
CoolMOS
™ 1)
Power MOSFET
Low R
DSon
, high V
DSS
Superjunction MOSFET
D
V
DSS
= 600 V
I
D25
= 85 A
R
DS(on) max
= 36 mΩ
TO-264
G
G
D
S
S
tab
E72873
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D100
E
AS
E
AR
dV/dt
Symbol
T
C
= 25°C
T
C
= 100°C
single pulse I
D
= 10 A; T
C
= 25°C
repetitive
I
D
= 20 A; T
C
= 25°C
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Conditions
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
85
55
1800
1
50
V
V
A
A
mJ
mJ
V/ns
Features
• 3
rd
generation CoolMOS
™ 1)
power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
1)
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
30
2
T
VJ
= 25°C
T
VJ
= 125°C
13.6
4.4
290
500
50
240
20
27
110
10
0.18
640
max.
36
4
50
500
±200
mW
V
µA
µA
nA
nF
nF
pF
nC
nC
nC
ns
ns
ns
ns
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
V
GS
= 10 V; I
D
= I
D100
V
DS
= V
GS
; I
D
= 5.4 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 25 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 350 V; I
D
= 85 A
CoolMOS
™
is a trademark of
Infineon Technologies AG.
V
GS
= 13 V; V
DS
= 380 V
I
D
= 85 A; R
G
= 1.0
Ω
Pulse test, t < 300 µs, duty cycle d < 2%
IXYS reserves the right to change limits, test conditions and dimensions.
20100315c
© 2010 IXYS All rights reserved
1-4
IXKK 85N60C
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
I
F
= 85 A; V
GS
= 0 V
I
F
= 85 A; -di
F
/dt = 200 A/µs; V
R
= 350 V
580
46
140
V
GS
= 0 V
85
250
1.2
A
A
V
ns
µC
A
Component
Symbol
T
VJ
T
stg
M
d
Symbol
R
thCH
Weight
TO-264 Outline
Conditions
operating
mounting torque
Conditions
with heatsink compound
Maximum Ratings
-55...+150
-55...+150
0.8 ... 1.2
°C
°C
Nm
Characteristic Values
min.
typ.
0.15
10
max.
K/W
g
SYM
A
A1
b
b1
b2
C
D
E
e
L
L1
L2
L3
P
Q
Q1
R
R1
S
INCHES
MIN
MAX
.185
.209
.102
.118
.037
.055
.087
.102
.110
.126
.017
.029
1.007
1.047
.760
.799
.215 BSC
.193
.201
.096
.088
.075
.083
.000
.004
.122
.138
.240
.256
.330
.346
.155
.187
.085
.093
.243
.253
MILLIMETERS
MIN
MAX
4.70
5.31
2.59
3.00
0.94
1.40
2.21
2.59
2.79
3.20
0.43
0.74
25.58
26.59
19.30
20.29
5.46 BSC
4.90
5.10
2.24
2.44
1.90
2.10
0.00
0.10
3.10
3.51
6.10
6.50
8.38
8.79
3.94
4.75
2.16
2.36
6.43
6.17
NOTE 1. This drawing meets all dimension
:
s
requirement of JEDEC outline
s
TO-264AAexcept L, L1, L2, L3.
2. All metal su
rface are solder pl
ated
except trimmed a
rea.
IXYS reserves the right to change limits, test conditions and dimensions.
20100315c
© 2010 IXYS All rights reserved
2-4
IXKK 85N60C
Fig. 1. Output Characteristics
@ 25 Deg. C
100
90
80
Fig. 2. Extended Output Characteristics
@ 25 deg. C
360
320
280
t
p = 300µs
V
GS
= 10V
6V
5V
t
p = 300µs
V
GS
= 10V
7V
I
D
- Amperes
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
4V
4.5V
I
D
- Amperes
240
200
160
120
80
40
0
6V
5V
V
D S
- Volts
2.5
3
3.5
0
2
4
6
V
D S
- Volts
8
10
12
14
16
18
Fig. 3. Output Characteristics
@ 125 Deg. C
100
90
80
Fig. 4. R
DS(on)
Norm alized to I
D100
Value
vs. Junction Tem perature
2.8
2.5
V
GS
= 10V
t
p = 300µs
V
GS
= 10V
5V
t
p = 300µs
I
D
- Amperes
70
60
50
40
30
20
10
0
0
1
2
4.5V
R
D S (on)
- Normalized
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 60A
I
D
= 30A
4V
V
D S
- Volts
3
4
5
6
7
-50
-25
0
T
J
- Degrees Centigrade
25
50
75
100
125
150
Fig. 5. R
DS(on)
Norm alized to
I
D100
Value vs. I
D
4
3.7
3.4
V
GS
= 10V
100
Fig. 6. Drain Current vs. Case
Tem perature
90
80
t
p = 300µs
T
J
= 125ºC
R
D S (on)
- Normalized
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0
40
80
120
160
70
I
D
- Amperes
T
J
= 25ºC
60
50
40
30
20
10
0
I
D
- Amperes
200
240
280
320
360
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
IXYS reserves the right to change limits, test conditions and dimensions.
20100315c
© 2010 IXYS All rights reserved
3-4
IXKK 85N60C
Fig. 7. Input Adm ittance
240
210
180
150
120
90
60
30
0
2
2.5
3
3.5
4
4.5
5
5.5
6
T
J
= 125ºC
25ºC
-40ºC
180
160
140
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
120
100
80
60
40
20
0
V
G S
- Volts
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
30
60
90
I
D
- Amperes
120
150
180
210
240
Fig. 10. Gate Charge
10
9
8
7
V
DS
= 350V
I
D
= 80A
I
G
= 10mA
200
180
160
I
S
- Amperes
140
120
100
80
60
40
20
0
0.4
0.5
0.6
T
J
= 125ºC
T
J
= 25ºC
V
G S
- Volts
6
5
4
3
2
1
0
V
S D
- Volts
0.7
0.8
0.9
1
1.1
0
60
120
Q
G
- nanoCoulombs
180
240
300
360
420
480
540
Fig. 11. Capacitance
100000
f = 1MHz
C
iss
0.18
0.16
0.14
Fig. 12. Maxim um Transient Therm al
Resistance
Capacitance - pF
10000
R
(th) J C
- (ºC/W
)
0.12
0.1
0.08
0.06
0.04
1000
C
oss
100
C
rss
10
0
10
20
30
40
0.02
0
IXYS reserves the right to change
DS
limits, test conditions and dimensions.
V
- Volts
50
60
70
80
90
100
1
Pulse Width - milliseconds
10
100
1000
20100315c
© 2010 IXYS All rights reserved
4-4
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