EDO DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, DIP-20
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 20 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE WITH EDO |
| Maximum access time | 70 ns |
| JESD-30 code | R-PDIP-T20 |
| length | 26.4 mm |
| memory density | 4194304 bit |
| Memory IC Type | EDO DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 20 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| organize | 1MX4 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 7.62 mm |
京公网安备 11010802033920号
EEWORLD
