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BZT52C56RHG

Description
Zener Diode, 56V V(Z), 5%, 0.5W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size225KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT52C56RHG Overview

Zener Diode, 56V V(Z), 5%, 0.5W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2

BZT52C56RHG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage56 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Maximum voltage tolerance5%
Working test current2 mA
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- VZ Tolerance Selection of ±5%
- Matte Tin(Sn) lead finish
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
, T
STG
VALUE
1
500
350
-65 to +150
UNIT
V
mW
o
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408004
Version: F14

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