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SA2J-E3

Description
Surface Mount Glass Passivated Rectifier
File Size76KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SA2J-E3 Overview

Surface Mount Glass Passivated Rectifier

SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 2.0 A
T
J
max.
Package
Diode variations
2.0 A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
55 A
3.0 μA
0.854 V
150 °C
DO-214AC (SMA)
Single die
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
SA2B
2B
100
SA2D
2D
200
SA2G
2G
400
2.0
55
- 55 to + 150
SA2J
2J
600
SA2K
2K
800
SA2M
2M
1000
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.0 A
Instantaneous forward voltage
I
F
= 2.0 A
I
F
= 1.0 A
I
F
= 2.0 A
Reverse current
Typical reverse recovery time
Typical junction capacitance
Rated V
R
T
J
= 25 °C
V
F (1)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.911
0.954
0.805
0.854
0.19
28
1.5
11
MAX.
-
1.1
-
0.95
3
90
-
-
μA
μs
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 14-Aug-13
Document Number: 88969
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SA2J-E3 Related Products

SA2J-E3 SA2B-E3 SA2D-E3 SA2G-E3 SA2K-E3 SA2M-E3 SA2M-E35AT
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