DATA SHEET
NE46234 /
2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
DESCRIPTION
NPN SILICON RF TRANSISTOR
JEITA
Part No.
The
NE46234 /
2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
(V
CE
= 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It
employs surface mount type plastic package, power minimold (SOT-89).
FEATURES
• Low distortion, low voltage: IM
2
= 55 dBc TYP., IM
3
= 76 dBc TYP. @ V
CE
= 5 V, I
C
= 50 mA, V
O
= 105 dB
µ
V/75Ω
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
NE46234-AZ
2SC4703-AZ
NE46234-T1-AZ
2SC4703-T1-AZ
Quantity
25 pcs (Non reel)
1 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
SC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
I
C
Total Power Dissipation
Junction Temperature
P
tot
T
j
Storage Temperature
T
stg
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
Parameter
O
Symbol
V
CBO
V
CEO
V
EBO
Note
The unit sample quantity is 25 pcs.
NT
Ratings
25
12
2.5
150
1.8
150
−65
to +150
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
DI
2
Note
Mounted on double-sided copper-clad 16 cm
×
0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
The mark
•
shows major revised points.
IN
Unit
V
V
V
mA
W
°C
°C
• Large P
tot
: P
tot
= 1.8 W (Mounted on double-sided copper-clad 16 cm
2
×
0.7 mm (t) ceramic substrate)
UE
Supplying Form
D
NE46234 / 2SC4703
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Collector Capacitance
2nd Order Intermoduration Distortion
f
T
⏐S
21e
⏐
2
⏐S
21e
⏐
2
NF
C
ob
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 20 V, I
E
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 5 V, I
C
= 50 mA
–
–
50
–
–
1.5
1.5
μ
A
μ
A
–
V
CE
= 5 V, I
C
= 50 mA, f = 1 GHz
UE
6.5
–
8.3
–
8.5
–
–
2.3
3.5
–
1.5
55
2.5
–
V
CE
= 5 V
–
V
CE
= 10 V
63
–
V
CE
= 5 V
–
76
81
–
–
V
CE
= 10 V
–
V
CE
= 5 V, I
C
= 50 mA
–
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 50 mA, f = 1 GHz
V
CB
= 5 V, I
E
= 0 mA, f = 1 MHz
I
C
= 50 mA,
V
O
= 105 dB
μ
V/75
Ω,
f = 190
−
90 MHz
IM
2
3rd Order Intermoduration Distortion
IM
3
I
C
= 50 mA,
V
O
= 105 dB
μ
V/75
Ω,
f = 2
×
190
−
200 MHz
IN
SE
SE
125 to 250
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
SH
SH
50 to 100
DI
SC
2
O
NT
SF
SF
80 to 160
Data Sheet PU10339EJ01V1DS
2.
Collector to base capacitance when the emitter grounded
D
–
250
6.0
–
GHz
dB
dB
dB
pF
dBc
dBc
NE46234 / 2SC4703
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2 500
Total Power Dissipation P
tot
(mW)
5
Output Capacitance C
ob
(pF)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
1 800
2
1
0.5
1 500
1 000
500
Free Air
R
th (j-a)
312.5˚C/W
400
0
UE
0.2
0.1 0.2 0.3 0.5
1
2 3
5
10
Collector to Base Voltage V
CB
(V)
120
100
80
60
40
20
0
I
B
= 0.7 mA
0.6 mA
2
4
6
8
10
10
f = 1 GHz
9
8
7
6
5
4
1
2
5 7 10
20
Collector Current I
C
(mA)
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
1 000
Collector Current I
C
(mA)
100
NT
0.4
5V
Collector Current I
C
(mA)
V
CE
= 10 V
IN
1.2
Insertion Power Gain |S
21e
|
2
(dB)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
1
O
0.1
0.2
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
SC
500
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 10 V
DC Current Gain h
FE
V
CE
= 10 V
5V
100
50
DI
10
0.1
1
10
100
1 000
Collector Current I
C
(mA)
Data Sheet PU10339EJ01V1DS
D
20 30
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
12
14
5V
50 70100
200
2 000
Ceramic Substrate
16 cm
2
×
0.7 mm (t)
R
th (j-a)
62.5˚C/W
3
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