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DMV1500HF5

Description
6A, 1500V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size76KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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DMV1500HF5 Overview

6A, 1500V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3

DMV1500HF5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationHIGH VOLTAGE FAST RECOVERY
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current80 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.125 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

DMV1500HF5 Preview

®
DMV1500H
DAMPER + MODULATION DIODE FOR VIDEO
DAMPER
MODULATION
MAIN PRODUCT CHARACTERISTICS
MODUL
I
F(AV)
V
RRM
t
rr
(max)
V
F
(max)
3A
600 V
50 ns
1.4 V
DAMPER
6A
1500 V
125 ns
1.7 V
1
2
3
1
2
3
FEATURES AND BENEFITS
s
s
s
s
s
Insulated TO-220AB
(Bending option F5 available)
s
s
s
Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for low
dissipation
Insulated version:
Insulated voltage = 2500 V
RMS
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.
ABSOLUTE RATINGS
(limiting values, per diode)
Value
Symbol
V
RRM
I
FSM
T
stg
T
j
Parameter
MODUL DAMPER
Repetitive peak reverse voltage
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
tp = 10 ms sinusoidal
600
35
1500
80
V
A
°C
Unit
- 40 to + 150
150
July 2001 - Ed: 6A
1/9
DMV1500H
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-c)
Damper junction to case
Modulation junction to case
Parameter
Value
3.6
6
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Typ.
V
F
*
I
R
**
Pulse test :
Tj = 125°C
Typ.
1.25
100
Max.
1.7
1000
Unit
Max.
2.3
100
Forward voltage drop
Reverse leakage current
* tp = 380
µs, δ
< 2%
**tp = 5 ms,
δ
< 2%
I
F
= 6 A
V
R
= 1500V
1.5
V
µA
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
2
P = 1.35 x IF(AV) + 0.059 x IF (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
Value
Symbol
V
F
*
I
R
**
Pulse test :
Parameter
Forward voltage drop
Reverse leakage current
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
Test
conditions
I
F
= 3A
V
R
= 600V
Tj = 25°C
Typ.
Max.
1.8
20
Tj = 125°C
Typ.
1.1
3
Max.
1.4
50
Unit
V
µA
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
2
P = 1.2 x IF(AV) + 0.066 x IF (RMS)
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
Symbol
t
rr
Parameter
Reverse recovery time
Test conditions
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
I
F
= 1A
dI
F
/dt = -50A/µs
V
R
= 30V
Tj = 25°C
Value
Typ.
625
Max.
Unit
ns
t
rr
Reverse recovery time
Tj = 25°C
95
125
ns
2/9
®
DMV1500H
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
Symbol
t
rr
Parameter
Reverse recovery time
Test conditions
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
I
F
= 1A
dI
F
/dt = -50A/µs
V
R
= 30V
Tj = 25°C
Value
Typ.
110
Max.
350
Unit
ns
t
rr
Reverse recovery time
Tj = 25°C
50
ns
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
Symbol
t
fr
Parameter
Forward recovery time
Test conditions
I
F
= 6A
dI
F
/dt = 80A/µs
V
FR
= 3V
I
F
= 6A
dI
F
/dt = 80A/µs
Tj = 100°C
Value
Typ.
350
Max.
Unit
ns
V
FP
Peak forward voltage
Tj = 100°C
18
25
V
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
Symbol
t
fr
Parameter
Forward recovery time
Test conditions
I
F
= 3A
dI
F
/dt = 80A/µs
V
FR
= 2V
I
F
= 3A
dI
F
/dt = 80A/µs
Tj = 100°C
Value
Typ.
Max.
240
Unit
ns
V
FP
Peak forward voltage
Tj = 100°C
8
V
®
3/9
DMV1500H
Fig. 1-1:
Power dissipation versus peak forward
current (triangular waveform,
δ
= 0.45) (damper
diode).
PF(av)(W)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 1-2:
Power dissipation versus peak forward
current (triangular waveform,
δ
= 0.45) (modula-
tion diode).
PF(av)(W)
Ip(A)
0
1
2
3
4
5
6
Ip(A)
0
1
2
3
4
5
6
Fig. 2-1:
Average forward current versus ambient
temperature (damper diode).
IF(av)(A)
8
7
Rth(j-a)=Rth(j-c)
Fig. 2-2:
Average forward current versus ambient
temperature (modulation diode).
IF(av)(A)
4.0
3.5
Rth(j-a)=Rth(j-c)
6
5
4
3
2
1
0
0
δ
=tp/T
T
3.0
2.5
2.0
1.5
1.0
tp
T
Tamb(°C)
50
75
100
125
150
0.5
0.0
0
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
25
25
Fig. 3-1:
Forward voltage drop versus forward
current (damper diode).
Fig. 3-2:
Forward voltage drop versus forward
current (modulation diode).
IFM(A)
15.0
Typical
Tj=125°C
IFM(A)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
Typical
Tj=125°C
10.0
Maximum
Tj=125°C
Maximum
Tj=25°C
Maximum
Tj=125°C
Maximum
Tj=25°C
5.0
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
4/9
®
DMV1500H
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5-1:
Non repetitive surge peak forward current
versus overload duration (damper diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ
= 0.5
IM(A)
40
35
30
25
20
15
T
Tc=100°C
0.5
δ
= 0.2
δ
= 0.1
0.2
Single pulse
10
tp
I
M
t
tp(s)
0.1
1E-3
1E-2
1E-1
δ
=tp/T
5
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
1E+0
Fig. 5-2:
Non repetitive surge peak forward current
versus overload duration (modulation diode).
Fig. 6-1:
Reverse recovery charges versus dIF/dt
(damper diode).
IM(A)
30
25
20
15
10
I
M
Qrr(nc)
Tc=100°C
1200
1000
800
600
400
IF= 6A
90% confidence
Tj=125°C
5
0
1E-3
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
200
dIF/dt(A/µs)
0
0.1
0.2
0.5
1.0
2.0
5.0
Fig. 6-2:
Reverse recovery charges versus dIF/dt
(modulation diode).
Fig. 7-1:
Reverse recovery current versus dIF/dt
(damper diode).
Qrr(nC)
200
IF= 3A
90% confidence
Tj=125°C
IRM(A)
2.4
IF= 6A
2.2
90% confidence
Tj=125°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.2
150
100
50
dIF/dt(A/µs)
0
0.1
1.0
10.0
100.0
dIF/dt(A/µs)
0.5
1.0
2.0
5.0
®
5/9
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