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IRF5NJZ48SCV

Description
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size115KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF5NJZ48SCV Overview

HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

PD - 94034
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
IRF5NJZ48
BVDSS
IRF5NJZ48
55V, N-CHANNEL
55V
R
DS(on)
0.016Ω
I
D
22A*
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
22*
22*
88
75
0.60
±20
160
22
7.5
3.6
-55 to 150
300 (for 5 s)
1.0
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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