EEWORLDEEWORLDEEWORLD

Part Number

Search

M58WR032QB80ZB6

Description
2MX16 FLASH 1.8V PROM, 80ns, PBGA56, 7.7 X 9 MM, 0.75 MM PITCH, VFBGA-56
Categorystorage    storage   
File Size829KB,110 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M58WR032QB80ZB6 Overview

2MX16 FLASH 1.8V PROM, 80ns, PBGA56, 7.7 X 9 MM, 0.75 MM PITCH, VFBGA-56

M58WR032QB80ZB6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction7.7 X 9 MM, 0.75 MM PITCH, VFBGA-56
Contacts56
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time80 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B56
JESD-609 codee0
length7.7 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals56
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA56,7X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8,1.8/2 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width9 mm
M58WR016QT M58WR016QB
M58WR032QT M58WR032QB
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
– V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2.24V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random access: 60ns, 70ns, 80ns
Synchronous Burst Read Suspend
Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter blocks (top or bottom location)
Dual operations
– Program Erase in one bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR016QT (Top): 8812h.
M58WR016QB (Bottom): 8813h
M58WR032QT (Top): 8814h
M58WR032QB (Bottom): 8815h
ECOPACK® package available
April 2006
Rev 1
1/110
www.st.com
1
Mobile phone wireless Bluetooth teaching
In addition to its own functions, the mobile phone can also control the computer touch screen through the low-power SensorTag. In addition to general PPT control, it can also play mobile videos and bu...
yeqiqi94100 Wireless Connectivity
Welfare game: As smart as you are, come and challenge TI Geek!
[font=微软雅黑][size=3][color=#3e3e3e][b]I just played a game that challenges TI geeks. It feels like a pure welfare game. I would like to share it with you all.[/b][/color][/size][/font][align=center][ur...
eric_wang TI Technology Forum
[Transfer] STM32 FSMC study notes
FSMC stands for "static memory controller". After using the FSMC controller, you can use the FSMC_A[25:0] provided by the FSMC as the address line, and the FSMC_D[15:0] provided by the FSMC as the dat...
qinkaiabc stm32/stm8
Virtual Instrument for Determining the BH Loop Characteristics of Magnetic Cores
Virtual Instrument for Determining BH Loop Characteristics of a Magnetic Core When designing inductive components that contain magnetic core material, engineers must accurately measure the characteris...
feifei Test/Measurement
2008 Guangmaoda Cup China Intelligent Robot Competition
[i=s]This post was last edited by paulhyde on 2014-9-15 09:16[/i] I participated in the search and rescue robot competition at the 9th Guangmaoda Cup China Intelligent Robot Competition and won the fi...
zhaozhi0810 Robotics Development
Is there anyone who made their own pic burner?
As the title says, has anyone made a PIC single chip programmer by themselves? If so, can you share it? Thanks in advance~~...
renliang Microchip MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2737  579  2365  1117  1268  56  12  48  23  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号