ST93C57CB1 datasheet, PDF - EEWORLD Datasheet

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ST93C57CB1: Description128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8; Categorystorage storage; File Size408KB，13 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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ST93C57CB1 Overview

128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8

ST93C57CB1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	DIP
package instruction	DIP, DIP8,.3
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16
Spare memory width	8
Maximum clock frequency (fCLK)	1 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.55 mm
memory density	2048 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	128 words
character code	128
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128X16
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3/5 V
Certification status	Not Qualified
Maximum seat height	4.8 mm
Serial bus type	MICROWIRE
Maximum standby current	0.00005 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Maximum write cycle time (tWC)	10 ms
write protect	SOFTWARE

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ST93C57CB1 Related Products

	ST93C57CB1	ST93C56CB3	ST93C57CB6	ST93C56B6	ST93C56B3	ST93C57CB3	ST93C56CB1	ST93C56CB6
Description	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8	128X16 MICROWIRE BUS SERIAL EEPROM, PDIP8, PLASTIC, DIP-8
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	DIP, DIP8,.3	DIP, DIP8,.3	DIP, DIP8,.3	PLASTIC, DIP-8	PLASTIC, DIP-8	DIP, DIP8,.3	DIP, DIP8,.3	DIP, DIP8,.3
Contacts	8	8	8	8	8	8	8	8
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16
Spare memory width	8	8	8	8	8	8	8	8
Maximum clock frequency (fCLK)	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz
Data retention time - minimum	40	40	40	40	40	40	40	40
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
JESD-30 code	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8	R-PDIP-T8
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
length	9.55 mm	9.55 mm	9.55 mm	9.55 mm	9.55 mm	9.55 mm	9.55 mm	9.55 mm
memory density	2048 bit	2048 bit	2048 bit	2048 bit	2048 bit	2048 bit	2048 bi	2048 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8	8	8
word count	128 words	128 words	128 words	128 words	128 words	128 words	128 words	128 words
character code	128	128	128	128	128	128	128	128
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	125 °C	85 °C	85 °C	125 °C	125 °C	70 °C	85 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C
organize	128X16	128X16	128X16	128X16	128X16	128X16	128X16	128X16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3/5 V	5 V	3.3/5 V	5 V	5 V	3.3/5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.8 mm	4.8 mm	4.8 mm	4.8 mm	4.8 mm	4.8 mm	4.8 mm	4.8 mm
Serial bus type	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
Maximum standby current	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
Maximum slew rate	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	3 V	4.5 V	3 V	4.5 V	4.5 V	3 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	3.3 V	5 V	3.3 V	5 V	5 V	3.3 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
write protect	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE

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