US1A thru US1M
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 1000 V
30 A
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
DO-214AC (SMA)
Features
•
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 110 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
Symbol
US1A
UA
50
35
50
US1B
UB
100
70
100
US1D
UD
200
140
200
US1G US1J US1K US1M
UG
400
280
400
1.0
30
- 55 to + 150
UJ
600
420
600
UK
800
560
800
UM
1000
700
1000
V
V
V
A
A
°C
Units
Document Number 88768
05-Aug-05
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US1A thru US1M
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Test condition
Symbol
V
F
I
R
t
rr
C
J
50
15
US1A
US1B
1.0
10
50
75
10
US1D US1G US1J US1K US1M
1.7
Units
V
µA
ns
pF
Maximum instantaneous forward at 1.0 A
(1)
voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
T
A
= 25 °C
T
A
=100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum thermal resistance
(1)
Symbol
R
θJA
R
θJL
US1A
US1B US1D US1G
75
27
US1J
US1K
US1M
Units
°C/W
Notes:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
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Document Number 88768
05-Aug-05
US1A thru US1M
Vishay General Semiconductor
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Instantaneous Reverse Leakage Current (µA)
1.2
100
T
j
= 150 °C
10
T
j
= 125 °C
Average Forward Rectified Current (A)
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
0.2 x 0.2” (5.0 x 5.0 mm)
Copper Pad Areas
0
25
50
75
100
125
150
T
j
= 100 °C
1
0,1
US1A-US1G
T
j
= 25 °C
0
0,01
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
30
100
T
L
= 110 °C
8.3
ms Single Half Sine-Wave
25
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
T
j
= 150 °C
10
T
j
= 125 °C
20
15
10
5
1
T
j
= 100 °C
0,1
T
j
= 25 °C
US1J-US1M
0
1
10
100
0,01
0,2
0,7
1,2
1,7
2,2
2,7
3,2
Number
of Cycles at 60 Hz
Instantaneous Forward
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Instantaneous Forward Characteristics
100
Instantaneous Reverse Leakage Current (µA)
1000
T
j
= 150 °C
100
T
j
= 125 °C
Instantaneous Forward Current (A)
10
T
j
= 125 °C
1
T
j
= 150 °C
10
T
j
= 100 °C
1
US1J-US1M
0,1
T
j
= 25 °C
0,1
T
j
= 100 °C
US1A-US1G
T
j
= 25 °C
0,01
0,3
0,5
0,7
0,9
1,1
0,01
0
20
40
60
80
100
1,3
1,5
1,7
Instantaneous Forward
Voltage
(V)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Document Number 88768
05-Aug-05
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3
US1A thru US1M
Vishay General Semiconductor
100
100
pF - Junction Capacitance
US1A - US1G
Transient Thermal Impedance (°C/W)
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
10
US1J - US1M
1
1
0.1
1
10
0.1
0.01
0.1
1
10
100
Reverse
Voltage
(V)
t - Pulse Duration (sec.)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.110 (2.79)
0.100 (2.54)
0.074 MAX.
(1.88 MAX.)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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Document Number 88768
05-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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