K4H560838D-ZCB30 datasheet, PDF

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K4H560838D-ZCB30: DescriptionDDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60; Categorystorage storage; File Size394KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H560838D-ZCB30 Overview

DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

K4H560838D-ZCB30 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TBGA,
Contacts	60
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	8
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	8 mm

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DDR SDRAM 256Mb H-die (x4, x8, x16)

DDR SDRAM

256Mb H-die DDR SDRAM Specification

60 FBGA with Pb-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.2 January. 2006

DDR SDRAM 256Mb H-die (x4, x8, x16)

Table of Contents

DDR SDRAM

1.0 Key Features ...............................................................................................................................4

2.0 Ordering Information ...................................................................................................................4

3.0 Operating Frequencies................................................................................................................4

4.0 Pin Description ...........................................................................................................................5

5.0 Package Physical Dimension ....................................................................................................6

6.0 Block Diagram (16Mbit x4 / 8Mbit x8 / 4Mbit x16 I/O x4 Banks)...............................................7

7.0 Input/Output Function Description ............................................................................................8

8.0 Command Truth Table.................................................................................................................9

9.0 General Description...................................................................................................................10

10.0 Absolute Maximum Rating .....................................................................................................10

11.0 DC Operating Conditions ........................................................................................................10

12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11

13.0 Input/Output Capacitance ......................................................................................................11

14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12

15.0 DDR SDRAM IDD spec table ..................................................................................................13

16.0 AC Operating Conditions .......................................................................................................14

17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15

19.0 AC Timming Parameters & Specifications ...........................................................................16

20.0 System Characteristics for DDR SDRAM ..............................................................................17

21.0 Component Notes ....................................................................................................................18

22.0 System Notes ..........................................................................................................................20

23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21

Rev. 0.2 January. 2006

K4H560838D-ZCB30 Related Products

	K4H560838D-ZCB30	K4H561638D-ZCB30	K4H561638D-ZCCC0	K4H560438D-ZLCC0	K4H561638D-ZLCC0	K4H560838D-ZLB30	K4H561638D-ZLB30	K4H560838D-ZCCC0	K4H560438D-ZLB30	K4H560838D-ZLCC0
Description	DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 32MX8, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60	DDR DRAM, 32MX8, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,	TBGA,
Contacts	60	60	60	60	60	60	60	60	60	60
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.7 ns	0.7 ns	0.65 ns	0.65 ns	0.65 ns	0.7 ns	0.7 ns	0.65 ns	0.7 ns	0.65 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
length	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bi
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	8	16	16	4	16	8	16	8	4	8
Humidity sensitivity level	2	2	2	3	2	2	2	2	3	2
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	60	60	60	60	60	60	60	60	60	60
word count	33554432 words	16777216 words	16777216 words	67108864 words	16777216 words	33554432 words	16777216 words	33554432 words	67108864 words	33554432 words
character code	32000000	16000000	16000000	64000000	16000000	32000000	16000000	32000000	64000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX8	16MX16	16MX16	64MX4	16MX16	32MX8	16MX16	32MX8	64MX4	32MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TBGA	TBGA	TBGA	TBGA	TBGA	TBGA	TBGA	TBGA	TBGA	TBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.5 V	2.5 V	2.5 V	2.3 V	2.3 V	2.5 V	2.3 V	2.5 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.6 V	2.6 V	2.6 V	2.5 V	2.5 V	2.6 V	2.5 V	2.6 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40	40	40
width	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
Maker	SAMSUNG	SAMSUNG	-	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
JESD-609 code	e1	e1	e1	-	e1	e1	e1	e1	-	e1
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Silver/Copper (Sn/Ag/Cu)

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