SMS6001
Elektronische Bauelemente
440mA, 60V,
R
DS(ON)
2
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS6001 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
K
E
D
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
ESD Rating: 2KV HBM
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.10
2.10
2.65
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.35
0.65
0.08
0.20
0.6 REF.
0.95 BSC.
APPLICATION
DC-DC converter circuit
Load Switch
DEVICE MARKING:
W61*
*
= Date Code
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7’ inch
Pin Configuration (Top View)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Power Dissipation
1.4
1.4
Symbol
V
DS
V
GS
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
I
D
P
D
I
D
P
D
I
DM
R
θJL
T
J
, T
STG
Rating
10S
60
±20
0.5
0.4
0.69
0.44
0.47
0.38
0.6
0.39
1
260
-55~150
0.44
0.35
0.53
0.34
0.42
0.33
0.47
0.3
Steady State
Unit
V
V
A
W
A
W
A
° /W
C
°
C
Continuous Drain Current
Power Dissipation
2.4
2.4
Pulsed Drain Current
3
Maximum Junction-to-Lead
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2014 Rev. A
Page 1 of 4
SMS6001
Elektronische Bauelemente
440mA, 60V,
R
DS(ON)
2
N-Ch Enhancement Mode Power MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
1
Symbol
T≦10S
Steady State
2
Rating
Typ.
140
176
165
198
100
Max.
180
232
205
261
120
Unit
R
θJA
R
θJA
R
θJC
T≦10S
Steady State
Steady State
° /W
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
2.3
Typ.
Max.
Unit
Teat Conditions
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
60
-
-
0.8
-
-
-
-
-
1.3
1.4
1.7
0.42
-
1
±5
2
2
2.6
-
V
µA
µA
V
V
GS
=0, I
D
=250µA
V
DS
=60V, V
GS
=0
V
DS
=0 , V
GS
= ±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=0.5A
V
GS
=4.5V, I
D
=0.2A
g
FS
-
S
V
DS
=15V, I
D
= 0.25A
Body-Drain Diode Ratings
Diode Forward On–Voltage
V
SD
-
0.9
1.5
V
I
S
=300mA, V
GS
=0
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
T
d(ON)
T
r
T
d(OFF)
T
f
-
-
-
-
-
-
-
-
-
-
-
23.37
7.33
5.2
1.2
0.15
0.21
0.12
7.6
5.1
24.6
10
-
-
-
-
-
nC
-
-
-
-
nS
-
-
V
DD
=30V,
I
D
=0.2A,
V
GEN
=10V,
R
G
=10 .
V
DD
=30V,
V
GS
=10V,
I
D
=0.37A
pF
V
DS
=25V,
V
GS
=0,
f=1MHz
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Pulse width<380µs
4. Repetitive rating, pulse width limited by junction temperature TJ=150°
C.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2014 Rev. A
Page 2 of 4
SMS6001
Elektronische Bauelemente
440mA, 60V,
R
DS(ON)
2
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2014 Rev. A
Page 3 of 4
SMS6001
Elektronische Bauelemente
440mA, 60V,
R
DS(ON)
2
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2014 Rev. A
Page 4 of 4
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