BZD27C SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Silicon zener diodes
- Low profile surface-mount package
- Zener and surge current specification
- Low leakage current
- Excellent stability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Voltage Regulator Diodes
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=0.2A
Power dissipation at T
L
=80℃
T
A
=25℃ (Note 1)
Non-repetitive peak pulse power dissipation
100μs square pulse (Note 2)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C6V8P to BZD27C100P)
(Note 2)
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
(Note 2)
Thermal resistance junction to ambient (Note 1)
Thermal resistance junction to lead
Operating and storage temperature range
Note 1: Mounted on Cu-Pad size 5mm x 5mm
Note 2: T
J
=25℃ prior to surge
SYMBOL
V
F
Ptot
P
ZSM
VALUE
1.2
2.3
1.0
300
UNIT
Volts
Watts
Watts
P
RSM
150
Watts
P
RSM
R
θJA
R
θJL
T
J
, T
STG
100
180
30
-55 to +175
Watts
℃/W
℃/W
℃
Document Number: DS_D1405036
Version: V14
BZD27C SERIES
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING
CODE
RU
RV
RT
MT
RQ
MQ
R3
RF
R2
M2
RH
MH
Note 1: "xx" defines voltage from 6.8V (BZD27C6V8P) to 220V (BZD27C220P)
GREEN COMPOUND
CODE
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
1,800 / 7" Plastic reel (8mm tape)
3,000 / 7" Plastic reel (8mm tape)
7,500 / 13" Paper reel (8mm tape)
7,500 / 13" Plastic reel (8mm tape)
10,000 / 13" Paper reel (8mm tape)
10,000 / 13" Plastic reel (8mm tape)
1,800 / 7" Plastic reel (12mm tape)
3,000 / 7" Plastic reel (12mm tape)
7,500 / 13" Paper reel (12mm tape)
7,500 / 13" Plastic reel (12mm tape)
10,000 / 13" Paper reel (12mm tape)
10,000 / 13" Plastic reel (12mm tape)
PACKAGE
PACKING
BZD27CxxP
(Note 1)
Prefix "H"
Suffix "G"
EXAMPLE
PREFERRED P/N
BZD27C10P RU
BZD27C10P RUG
BZD27C10PHRU
PART NO.
BZD27C10P
BZD27C10P
BZD27C10P
H
AEC-Q101
QUALIFIED
PACKING CODE
RU
RU
RU
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYP. DIODE CAPACITANCE vs
REVERSE VOLTAGE
10000
TYP. JUNCTION CAPACITANCE (pF)
C6V8P
1000
C12P
1
TYP. VF
MAX. VF
100
C27P
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
FORWARD VOLTAGE (V)
10
0.0
0.5
1.0
C200P
1.5
2.0
2.5
3.0
REVERSE VOLTAGE
FIG.3 POWER DISSIPATION vs
AMBIENT TEMPERATURE
3
MAX PULSE POWER DISSIPATION
(W)
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE(
o
C)
160
140
120
100
80
60
40
20
0
0
FIG. 4 MAXIMUM PULSE POWER DISSPATION vs
ZENER VOLTAGE
POWER DISSIPATION(W)
25
50
75
100
125
150
175
200
225
250
ZENER VOLTAGE (V)
Document Number: DS_D1405036
Version: V14
BZD27C SERIES
Taiwan Semiconductor
Working Voltage
Device
Device
Marking
Code
Min.
BZD27C6V8P
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
BZD27C220P
D7
D8
D9
E0
E1
E2
E3
E4
E5
E6
E7
E8
E9
F0
F1
F2
F3
F4
F5
F6
F7
F8
F9
G0
G1
G2
G3
G4
G5
G6
G7
G
G9
H0
H1
H2
H3
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
(Note 1)
V
Z
@ I
ZT
V
Max.
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
56
66
72
79
82
91
106
116
127
141
156
171
191
212
233
Typ.
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
60
60
60
80
150
150
150
150
280
350
430
Differential
Resistance
Temperature
Coefficient
ALPH
Z
@ I
Z
%/℃
Max.
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
200
200
200
250
300
300
300
350
450
750
900
Min.
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Max.
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
100
50
50
50
50
50
25
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
Test
Current
I
ZT
mA
Reverse Current@
Reverse Voltage
I
R
μA
Max.
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
V
R
V
r
dif
@ I
Z
Ω
Notes: 1. Pulse test: tp
≦5ms.
Document Number: DS_D1405036
Version: V14
BZD27C SERIES
Taiwan Semiconductor
Rev.
Breakdown
Voltage
V
(BR)
@I
test
V
Min.
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
BZD27C220P
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
Test
Current
I
test
mA
Min.
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
Coefficient
ALPHz@I
test
%/℃
Max
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Reverse Current@
Stand-Off Voltage
I
R
μA
Max.
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1
0.9
0.81
0.73
0.67
0.6
0.54
0.35
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
176
@V
WM
V
Clamping Voltage
Vc
V
Max.
11.3
12.3
13.3
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
150
152
185
205
224
229
254
279
@I
RSM
(Note 1)
A
Device
Notes: 1. Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000
μs
pulse)
Document Number: DS_D1405036
Version: V14
BZD27C SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.70
2.70
0.16
1.23
0.80
3.40
2.45
0.35
0.00
Max
1.90
2.90
0.30
1.43
1.20
3.80
2.60
0.85
0.10
Unit (inch)
Min
0.067
0.106
0.006
0.048
0.031
0.134
0.096
0.014
0.000
Max
0.075
0.114
0.012
0.056
0.047
0.150
0.102
0.033
0.004
DIM.
B
C
D
E
F
G
H
I
J
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.4
1.2
3.1
1.9
4.3
Unit (inch)
0.055
0.047
0.122
0.075
0.169
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405036
Version: V14
Embedded System
京公网安备 11010802033920号
EEWORLD
