White Electronic Designs
WV3EG64M64ETSU-D4
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM
FEATURES
Fast data transfer rate: PC3200 & PC2700
Clock speeds of 200MHz & 166MHz
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency : DDR400 (3 clock),
DDR333 (2.5 clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, 7.8μs refresh interval (8K
(64ms refresh)
Serial presence detect (SPD) with EEPROM
Serial presence detect with EEPROM
V
CC
= V
CCQ
= +2.5
V
±0.2V (166MHz)
V
CC
= V
CCQ
= +2.6V ±0.1V (200MHz)
Gold edge contacts
JEDEC standard 200 pin, small-outline, SO-DIMM
package
•
PCB height option:
D4: 31.75 mm (1.25”) TYP
* This product is under development, is not qualified or characterized and is subject to
change without notice.
DESCRIPTION
The WV3EG64M64ETSU is a 64Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
components. The module consists of eight 64Mx8 DDR
SDRAMs TSOP-II packages mounted on a 200 pin FR4
substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR400@CL=3
Clock Speed
CL-t
RCD
-t
RP
200MHz
3-3-3
DDR333@CL2.5
166MHz
2.5-3-3
March 2006
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
PIN CONFIGURATION
PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL
51
V
SS
101
A9
151
DQ42
1
V
REF
2
V
REF
52
V
SS
102
A8
152
DQ46
53
DQ19
103
V
SS
153
DQ43
3
V
SS
4
V
SS
54
DQ23
104
V
SS
154
DQ47
5
DQ0
55
DQ24
105
A7
155
V
CC
6
DQ4
56
DQ28
106
A6
156
V
CC
7
DQ1
57
V
CC
107
A5
157
V
CC
8
DQ5
58
V
CC
108
A4
158
CK1#
9
V
CC
59
DQ25
109
A3
159
V
SS
10
V
CC
60
DQ29
110
A2
160
CK1
11
DQS0
61
DQS3
111
A1
161
V
SS
12
DM0
62
DM3
112
A0
162
V
SS
13
DQ2
63
V
SS
113
V
CC
163
DQ48
14
DQ6
64
V
SS
114
V
CC
164
DQ52
65
DQ26
115
A10
165
DQ49
15
V
SS
16
V
SS
66
DQ30
116
BA1
166
DQ53
17
DQ3
67
DQ27
117
BA0
167
V
CC
18
DQ7
68
DQ31
118
RAS#
168
V
CC
19
DQ8
69
V
CC
119
WE#
169
DQS6
20
DQ12
70
V
CC
120
CAS#
170
DM6
21
V
CC
71
NC
121
CS0#
171
DQ50
22
V
CC
72
NC
122
NC
172
DQ54
23
DQ9
73
NC
123
NC
173
V
SS
24
DQ13
74
NC
124
NC
174
V
SS
25
DQS1
75
V
SS
125
V
SS
175
DQ51
26
DM1
76
V
SS
126
V
SS
176
DQ55
27
V
SS
77
NC
127
DQ32
177
DQ56
78
NC
128
DQ36
178
DQ60
28
V
SS
29
DQ10
79
NC
129
DQ33
179
V
CC
30
DQ14
80
NC
130
DQ37
180
V
CC
31
DQ11
81
V
CC
131
V
CC
181
DQ57
32
DQ15
82
V
CC
132
V
CC
182
DQ61
83
NC
133
DQS4
183
DQS7
33
V
CC
84
NC
134
DM4
184
DM7
34
V
CC
35
CK0
85
NC
135
DQ34
185
V
SS
36
V
CC
86
NC
136
DQ38
186
V
SS
37
CK0#
87
V
SS
137
V
SS
187
DQ58
38
V
SS
88
V
SS
138
V
SS
188
DQ62
39
V
SS
89
NC
139
DQ35
189
DQ59
40
V
SS
90
V
SS
140
DQ39
190
DQ63
41
DQ16
91
NC
141
DQ40
191
V
CC
42
DQ20
92
V
CC
142
DQ44
192
V
CC
43
DQ17
93
V
CC
143
V
CC
193
SDA
44
DQ21
94
V
CC
144
V
CC
194
SA0
45
V
CC
95
NC
145
DQ41
195
SCL
46
V
CC
96
CKE0
146
DQ45
196
SA1
47
DQS2
97
NC
147
DQS5
197
V
CCSPD
48
DM2
98
NC
148
DM5
198
SA2
49
DQ18
99
A12
149
V
SS
199
NC
50
DQ22
100
A11
150
V
SS
200
NC
WV3EG64M64ETSU-D4
PRELIMINARY
PIN NAMES
Symbol
A0-A12
BA0, BA1
DQ0-DQ63
CK0, CK0#
CK1, CK1#
CKE0
CS0#
WE#, CAS#, RAS#
DQS0-DQS7
DM0-DM7
V
CC
V
CCQ
V
CCSPD
V
REF
V
SS
SCL
SA0-SA2
SDA
NC
Description
Address input
Bank Address
Input/Output: Data I/Os, Data bus
Clock Input
Clock Enable Input
Chip Select Input
Command Input
Data Strobe
Data Write Mask
Supply: Power Supply
Power Supply for DQS
Supply: Serial EEPROM Positive
Power Supply
Supply: SSTL_2 reference voltage
Supply: Ground
Serial Clock
Presence Detect Address Input
Input/Output: Serial Presence-
Detect Data
No Connect
March 2006
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
WV3EG64M64ETSU-D4
PRELIMINARY
CS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
S0#
DQS4
DM4
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQS5
DM5
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQS6
DM6
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQS7
DM7
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ64
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
S0#
S0#
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
S0#
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
S0#
S0#
S0#
S0#
CKE0
BA0 - BA1
A0 - A12
RAS#
CAS#
WE#
CKE0: DDR SDRAMs
BA0 - BA1: DDR SDRAMs
A0 - A12: DDR SDRAMs
RAS#: DDR SDRAMs
CAS#: DDR SDRAMs
WE#: DDR SDRAMs
SCL
SP
Serial PD
SDA
A0
SA0
A1
SA1
A2
SA2
120 Ohms
V
CCSPD
V
CC/
V
CCQ
V
REF
V
SS
SPD
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
CK0
CK0#
120 Ohms
DDR SDRAM x 4
CK1
CK1#
DDR SDRAM x 4
Note: 1. All resistor values are 22Ω unless otherwise specified.
March 2006
Rev. 0
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
DC OPERATING CONDITIONS
T
A
= 0°C to 70°C
Parameter/Condition
Supply Voltage DDR400 (nominal VCC 2.6)
I/O Supply Voltage DDR400 (nominal VCC 2.6)
Supply Voltage DDR333
I/O Supply Voltage DDR333
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
Addr, CAS#,
RAS#, WE#
CS#, CKE
CK, CK#
DM
Symbol
V
CC
V
CCQ
V
CC
V
CCQ
V
REF
V
TT
V
IH(DC)
V
IL(DC)
V
IN(DC)
V
ID(DC)
V
IX(DC)
WV3EG64M64ETSU-D4
PRELIMINARY
Min
2.5
2.5
2.3
2.3
0.49 × V
CCQ
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
-0.3
-0.3
-16
Max
2.7
2.7
2.7
2.7
0.51 × V
CCQ
V
REF
+ 0.04
V
CC
+ 0.30
V
REF
- 0.15
V
CCQ
+ 0.30
V
CCQ
+ 0.60
V
CCQ
+ 0.60
16
16
8
2
5
—
—
—
—
Units
V
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
μA
mA
mA
mA
mA
Notes
1
2
3
Input leakage current
I
I
Output leakage current
Output high current (normal strength)
V
OUT
= v + 0.84V
Output high current (normal strength)
V
OUT
= v - 0.84V
Output high current (half strength)
V
OUT
= V
TT
+ 0.45V
Output high current (half strength)
V
OUT
= V
TT
- 0.45V
I
OZ
I
OH
I
OL
V
OH
V
OL
-16
-8
-2
-5
-16.8
-16.8
-9
9
Notes:
1. V
REF
is expected to be equal to 0.5*V
CCQ
of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on V
REF
may not exceed +/-2% of the DC
values.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level of CK#.
4. Industrial grade modules are specified to a DRAM t
CASE
of 85°C and -40°C
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any in relative to V
SS
Voltage on V
CC
& V
CCQ
supply relative to V
SS
Voltage on V
REF
supply relative to V
SS
Storage temperature
Operating temperature
Power dissipation
Short circuit output current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
V
REF
T
STG
T
A
P
D
I
OS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
0 ~ 70
8
50
Units
V
V
V
°C
°C
W
mA
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
March 2006
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
INPUT/OUTPUT CAPACITANCE
T
A
= 25°C, f = 100MHz
Parameter
Input capacitance (A0 ~ A12, BA0 ~ BA1, RAS#, CAS# WE#)
Input capacitance (CKE0)
Input capacitance (CS0#)
Input capacitance (CK0, CK0#, CK1, CK1#)
Input capacitance (DM0 ~ DM7)
Input capacitance (DQ0 ~ DQ63), (DQS0 ~ DQS7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
OUT1
WV3EG64M64ETSU-D4
PRELIMINARY
Min
20
20
20
12
8
8
Max
28
28
28
16
9
9
Units
pF
pF
pF
pF
pF
pF
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
AC OPERATING CONDITIONS
Parameter
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Differential Voltage, CK and CK# inputs
Input crossing point voltage, CK and CK# input
Symbol
V
IH(AC)
V
IL(AC)
V
ID(AC)
V
IX(AC)
Min
V
REF
+ 0.31
0.7
0.5*V
CCQ
- 0.2
Max
V
REF
- 0.31
V
CCQ
+ 0.6
0.5*V
CCQ
+ 0.2
Units
V
V
V
V
March 2006
Rev. 0
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Talking
京公网安备 11010802033920号
EEWORLD
