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TS6B06GD2G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size212KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

TS6B06GD2G Overview

Bridge Rectifier Diode,

TS6B06GD2G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
TS6B01G thru TS6B07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength of 2000VRMS
- Reliable low cost construction
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS4B
MECHANICAL DATA
Case:
TS4B
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
5 in-lbs maximum
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@3A
@6A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS6B
01G
50
35
50
TS6B
02G
100
70
100
TS6B
03G
200
140
200
TS6B
04G
400
280
400
6
150
93
1.0
1.1
5
500
1.5
- 55 to +150
- 55 to +150
O
TS6B
05G
600
420
600
TS6B
06G
800
560
800
TS6B
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
C/W
O
O
C
C
Document Number: DS_D1311040
Version: D13
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