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UR4KB60C2G

Description
Rectifier Diode, 4 Element, 4A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size196KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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UR4KB60C2G Overview

Rectifier Diode, 4 Element, 4A, 600V V(RRM),

UR4KB60C2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current135 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED

UR4KB60C2G Preview

UR4KB60 thru UR4KB100
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for printed circuit board
- High case dielectric strength
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
D3K
MECHANICAL DATA
Case:
D3K
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.24 g (approximately)
Mounting Torque:
0.8 N.M max.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward current Without heat sink T
C
=120℃
60Hz sine wave resistance load
With heat sink T
C
=138℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating of fusing ( t < 8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum DC reverse current at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
R
θJL
R
θJA
T
J
T
STG
UR4KB
60
600
420
600
UR4KB
80
800
560
800
2
4
135
75
1.0
10
8.2
9.3
14
- 55 to +150
- 55 to +150
O
UR4KB
100
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
UR4KBx0
(Note 1)
PACKING CODE
GREEN COMPOUND
CODE
C2
Suffix "G"
D3K
1,500 / BOX
PACKAGE
PACKING
Note 1: "x" defines voltage from 600V (UR4KB60) to 1000V (UR4KB100)
EXAMPLE
PREFERRED P/N
UR4KB60 C2
UR4KB60 C2G
PART NO.
UR4KB60
UR4KB60
PACKING CODE
C2
C2
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
5
4
FIG.1 FORWARD CURRENT DERATING CURVE
140
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
120
100
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
(JEDEC Method)
AVERAGE FORWARD
A
CURRENT (A)
With heat sink
3
2
1
0
0
25
50
75
100
125
150
Without heat sink
CASE TEMPERATURE (
o
C)
PEAK FORWARD SURGE
CURRENT (A)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
1000
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE
A
CURRENT (μA)
TJ=125℃
TJ=125℃
10
INSTANTANEOUS FORWARD
A
CURRENT (A)
10
100
TJ=25℃
1
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
FIG. 5 FORWARD POWER DISSIPATION
7
6
POWER DISSIPATION(W)
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
FORWARD RECTIFIED CURRENT Io (A)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
13.50
0.70
11.70
10.50
11.70
1.10
3.51
6.70
1.10
1.05
0.66
2.90
2.40
3.10
1.00
0.40
1.80
0.40
Max
14.10
1.40
12.30
11.10
12.30
1.40
4.11
7.30
1.50
1.25
0.86
3.30
2.80
3.40
1.40
0.80
2.40
0.60
Unit (inch)
Min
0.531
0.028
0.461
0.413
0.461
0.043
0.138
0.264
0.043
0.041
0.026
0.114
0.094
0.122
0.039
0.016
0.071
0.016
Max
0.555
0.055
0.484
0.437
0.484
0.055
0.162
0.287
0.059
0.049
0.034
0.130
0.110
0.134
0.055
0.031
0.094
0.024
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1312019
Version: J13
UR4KB60 thru UR4KB100
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1312019
Version: J13

UR4KB60C2G Related Products

UR4KB60C2G UR4KB60C2 UR4KB80C2 UR4KB80C2G
Description Rectifier Diode, 4 Element, 4A, 600V V(RRM), Rectifier Diode, 4 Element, 4A, 600V V(RRM), Rectifier Diode, 4 Element, 4A, 800V V(RRM), Rectifier Diode, 4 Element, 4A, 800V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 135 A 135 A 135 A 135 A
Number of components 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A 4 A 4 A
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 600 V 600 V 800 V 800 V
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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