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D43C12-TYPE11

Description
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202AB, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size88KB,3 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

D43C12-TYPE11 Overview

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-202AB, Plastic/Epoxy, 3 Pin

D43C12-TYPE11 Parametric

Parameter NameAttribute value
MakerHarris
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-based maximum capacity125 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-202AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment12.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
VCEsat-Max0.5 V
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