This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR31AA
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Suitable for high-density mounting downsizing of the equipment
•
Contribute to low power consumption
0.23
+0.05
–0.02
1
2
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
0 to 0.01
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
on
Parameter
tin
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
■
Electrical Characteristics
T
a
=
25°C
±
3°C
isc
Collector-base voltage (Emitter open)
ce
/D
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Ma
int
en
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
5°
■
Absolute Maximum Ratings
T
a
=
25°C
0.15 min.
Rating
−50
−50
−80
100
125
Unit
V
V
0.52
±0.03
5°
mA
°C
°C
mW
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
−55
to
+125
Marking Symbol: DE
Internal Connection
R
1
(100 kΩ)
B
R
2
(100 kΩ)
C
E
Conditions
Min
−50
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
an
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−
0.1
−
0.5
−
0.1
µA
µA
V
V
mA
V
CE
= −10
V, I
C
= −5
mA
80
I
C
= −10
mA, I
B
= −
0.3 mA
−
0.25
−
0.2
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −5.0
V, R
L
=
1 kΩ
−4.9
V
kΩ
MHz
−30%
0.8
100
1.0
80
+30%
1.2
0.15 max.
0.15 min.
0.80
±0.05
1.20
±0.05
Publication date: June 2007
SJH00097BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR31AA
P
T
T
a
125
−100
T
a
= 25°C
I
B
= −500 µA
−400 µA
−300 µA
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE(sat)
I
C
I
C
/ I
B
=
10
Total power dissipation P
T
(mW)
100
−80
Collector current I
C
(mA)
−1
75
−60
−200 µA
−40
M
ain
Di
sc te
on na
tin nc
ue e/
d
50
−
0.1
T
a
= 85°C
25
−20
−100 µA
−25°C
25°C
−1
−10
−100
0
0
40
80
120
Ambient temperature T
a
(
°C
)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
300
V
CE
= −10
V
Forward current transfer ratio h
FE
250
T
a
= 85°C
25°C
200
−25°C
150
100
50
Input voltage V
IN
(V)
−10
−1
−
0.1
−
0.1
Ma
int
en
−1
an
V
O
= −
0.2 V
T
a
=
25°C
−10
ce
−100
Output current I
O
(mA)
2
/D
V
IN
I
O
isc
−100
on
tin
Collector current I
C
(mA)
ue
0
−
0.1
−1
−10
−100
−1
000
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
C
ob
V
CB
I
O
V
IN
10
f
=
1 MHz
T
a
=
25°C
−10
V
O
= −5
V
T
a
=
25°C
Output current I
O
(mA)
−1
1
−
0.1
−
0.01
0.1
0
−10
−20
−30
−40
− 0.001
0
− 0.5
−1
−1.5
−2
−2.5
Collector-base voltage
V
CB
(V)
Input voltage V
IN
(V)
SJH00097BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
京公网安备 11010802033920号
EEWORLD
