2SD1815
Elektronische Bauelemente
3A , 120V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-251
Low Collector-to-Emitter Saturation Voltage
Excllent Linearity of hFE
High fT
Fast Switching Time
A
B
C
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SD1815-Q
70~140
2SD1815-R
100~200
2SD1815-S
140~280
K
F
GE
H
Collector
M
J
P
Base
REF.
A
B
C
D
E
F
Emitter
Millimeter
Min.
Max.
6.35
6.80
4.90
5.50
2.15
2.40
0.43
0.90
6.50
7.50
7.20
9.65
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
5.40
6.25
0.85
1.50
2.30
0.60
1.05
0.50
0.90
0.43
0.62
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Ratings
120
100
6
3
1
150
-55 ~ 150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector Output Capacitance
Turn-on time
Storage time
Fall time
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
OB
t
on
t
S
t
f
Min.
120
100
6
-
-
70
40
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
25
100
900
50
Max.
-
-
-
1
1
280
-
0.4
1.2
-
-
-
-
-
Unit
V
V
V
μA
μA
Test Conditions
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=2A
I
C
=1.5A, I
B
=150mA
I
C
=1.5A, I
B
=150mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=50V, I
C
=1.5A,
I
B1
= -I
B2
= -0.15A
V
V
MHz
pF
nS
Any changes of specification will not be informed individually.
25-Feb-2014 Rev. B
Page 1 of 2
2SD1815
Elektronische Bauelemente
3A , 120V
NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Feb-2014 Rev. B
Page 2 of 2
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
